Effects of substrate temperature on the properties of Nb-doped ITO thin films

Chunhong Ma; Ruixin Ma; Shina Li; Baizhi Hu; Jingming Zhong; Hongmin Zhu

Effects of substrate temperature on the properties of Nb-doped ITO thin films

Chunhong Ma, Ruixin Ma, Shina Li, Baizhi Hu, Jingming Zhong, Hongmin Zhu

Research output: Contribution to journal › Article › peer-review

Abstract

ITO:Nb thin films with the thickness of 300 nm were prepared by magnetron sputtering using a ceramic niobium doped ITO target at the temperature from room temperature to 300°C. The structure, conductivity, and the optical transmission in the visible region of ITO:Nb films were investigated. The results of XRD analysis indicate that ITO:Nb thin films are In₂O₃ single phase. AFM images show that the surface roughness of the film increases with the temperature increasing. The resistivity decreases as the temperature increasing, reaching a minimum value of 1.2×10^-4 Ω·cm at 300°C due to the rising of both Hall mobility and carrier concentration. The average transmittance of films in the visible light region is over 87%. The optical band gap becomes wider and red shift of the absorption edge takes place with the rising of the temperature, which is coincident with the variation trend of the carrier concentration.

Original language	English
Pages (from-to)	1043-1047
Number of pages	5
Journal	Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
Volume	42
Issue number	5
Publication status	Published - 2013 May 1
Externally published	Yes

Keywords

Nb doped ITO
Properties
Substrate temperature
Transparent conductive thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Effects of substrate temperature on the properties of Nb-doped ITO thin films",

abstract = "ITO:Nb thin films with the thickness of 300 nm were prepared by magnetron sputtering using a ceramic niobium doped ITO target at the temperature from room temperature to 300°C. The structure, conductivity, and the optical transmission in the visible region of ITO:Nb films were investigated. The results of XRD analysis indicate that ITO:Nb thin films are In2O3 single phase. AFM images show that the surface roughness of the film increases with the temperature increasing. The resistivity decreases as the temperature increasing, reaching a minimum value of 1.2×10-4 Ω·cm at 300°C due to the rising of both Hall mobility and carrier concentration. The average transmittance of films in the visible light region is over 87%. The optical band gap becomes wider and red shift of the absorption edge takes place with the rising of the temperature, which is coincident with the variation trend of the carrier concentration.",

keywords = "Nb doped ITO, Properties, Substrate temperature, Transparent conductive thin films",

author = "Chunhong Ma and Ruixin Ma and Shina Li and Baizhi Hu and Jingming Zhong and Hongmin Zhu",

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TY - JOUR

T1 - Effects of substrate temperature on the properties of Nb-doped ITO thin films

AU - Ma, Chunhong

AU - Ma, Ruixin

AU - Li, Shina

AU - Hu, Baizhi

AU - Zhong, Jingming

AU - Zhu, Hongmin

PY - 2013/5/1

Y1 - 2013/5/1

N2 - ITO:Nb thin films with the thickness of 300 nm were prepared by magnetron sputtering using a ceramic niobium doped ITO target at the temperature from room temperature to 300°C. The structure, conductivity, and the optical transmission in the visible region of ITO:Nb films were investigated. The results of XRD analysis indicate that ITO:Nb thin films are In2O3 single phase. AFM images show that the surface roughness of the film increases with the temperature increasing. The resistivity decreases as the temperature increasing, reaching a minimum value of 1.2×10-4 Ω·cm at 300°C due to the rising of both Hall mobility and carrier concentration. The average transmittance of films in the visible light region is over 87%. The optical band gap becomes wider and red shift of the absorption edge takes place with the rising of the temperature, which is coincident with the variation trend of the carrier concentration.

AB - ITO:Nb thin films with the thickness of 300 nm were prepared by magnetron sputtering using a ceramic niobium doped ITO target at the temperature from room temperature to 300°C. The structure, conductivity, and the optical transmission in the visible region of ITO:Nb films were investigated. The results of XRD analysis indicate that ITO:Nb thin films are In2O3 single phase. AFM images show that the surface roughness of the film increases with the temperature increasing. The resistivity decreases as the temperature increasing, reaching a minimum value of 1.2×10-4 Ω·cm at 300°C due to the rising of both Hall mobility and carrier concentration. The average transmittance of films in the visible light region is over 87%. The optical band gap becomes wider and red shift of the absorption edge takes place with the rising of the temperature, which is coincident with the variation trend of the carrier concentration.

KW - Nb doped ITO

KW - Properties

KW - Substrate temperature

KW - Transparent conductive thin films

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SP - 1043

EP - 1047

JO - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

JF - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

SN - 1002-185X

IS - 5

ER -

Effects of substrate temperature on the properties of Nb-doped ITO thin films

Abstract

Keywords

ASJC Scopus subject areas

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