Effects of strain on crystallization of amorphous silicon characterized by laser Raman spectroscopy

Yasuo Kimura, Takashi Katoda

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

Solid-phase crystallization at a surface of amorphous silicon and at an interface between amorphous silicon and a substrate was studied by laser Raman spectroscopy. Amorphous silicon was deposited on a fused silica substrate by a sputtering method. The thickness of the amorphous silicon film was about 3 μm. The samples were annealed at 700 or 1000°C. Amorphous silicon crystallized faster at the surface than at the interface. The results were confirmed by characterization of the cross section by micro Raman spectroscopy. It was found from Raman shift of the polycrystalline silicon that the effect of the strain is to suppress crystallization.

Original languageEnglish
Pages (from-to)790-793
Number of pages4
JournalApplied Surface Science
Volume117-118
DOIs
Publication statusPublished - 1997 Jun 2

Keywords

  • Crystallization
  • Interface
  • Poly-Si
  • Raman spectroscopy
  • Strain

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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