Effects of static magnetic field and gas atmosphere on solidification of silicon by electromagnetic levitation

S. Ueno, H. Kobatake, H. Fukuyama, S. Awaji, H. Nakajima

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of static magnetic field and hydrogen gas atmosphere on the solidification of silicon with hydrogen atom were examined using electromagnetic levitation method in hydrogen atmosphere. Since the convection in the levitated silicon melt which is caused by the electromagnetic field is restrained by a high static magnetic field, it is possible to examine a solidification of silicon from an equilibrium silicon melt with hydrogen without an inflluence of convection. The cooling rate of the melt increases with increasing hydrogen partial pressure. Since the undercooling of the melt does not change with the static magnetic field, the grain size on the surface does not change with the static magnetic field. However, the morphology of the grain surface drastically changed from flat and smooth to undulation.

Original languageEnglish
Article number012020
JournalJournal of Physics: Conference Series
Volume165
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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