Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes

S. Chichibu, D. A. Cohen, M. P. MacK, A. C. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller, J. E. Bowers, U. K. Mishra, L. A. Coldren, D. R. Clarke, S. P. Denbaars

Research output: Contribution to journalReview articlepeer-review

75 Citations (Scopus)

Abstract

Optical gain spectra of InGaN multiquantum well laser diode wafers having Si-doped or undoped InGaN barriers were compared. Although evidence for effective band-gap inhomogeneity was found in both structures, the wells with the Si-doped barriers exhibited a smaller Stokes-like shift. Si doping suppressed emergence of a secondary amplified spontaneous emission peak at 3.05 eV, which was uncoupled with the primary one at 2.93 eV. Furthermore Si doping reduced the threshold power density required to obtain the stimulated emission.

Original languageEnglish
Pages (from-to)496-498
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number4
DOIs
Publication statusPublished - 1998
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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