Effects of S-doping and subsequent annealing on photoluminescence around 1.54μm from Er-containing ZnO

Zhen Zhou, N. Sato, T. Komaki, A. Koizumi, T. Komori, M. Morinaga, Y. Fujiwara, Y. Takeda

Research output: Contribution to journalConference article

Abstract

The wide band-gap semiconductor, ZnO, has been proposed as one of the good host for Er3+ ions. In this investigation S was doped into the Er-containing ZnO specimens through the heat treatment in a H2S gas atmosphere. After sulfurization, the photoluminescence (PL) peak centered at 675nm from the ZnO host became much weaker, and accordingly the absorption peaks of Er3+ at 526nm, 50nm, and 665 nm became weaker. Also, the PL intensity around 1.54μm decreased after the sulfurization. However, when the sulfurized specimens were annealed at 1000°C in air, the PL intensity increased by about 3 times. The effects could be due to the modification of the local structure around the Er3+ ions in ZnO.

Original languageEnglish
Pages (from-to)1125-1128
Number of pages4
JournalMaterials Science Forum
Volume475-479
Issue numberII
DOIs
Publication statusPublished - 2005 Jan 1
EventPRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing - Beijing, China
Duration: 2004 Nov 22004 Nov 5

Keywords

  • Er
  • Photoluminescence (PL)
  • Sintering
  • Sulfurization
  • ZnO

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Effects of S-doping and subsequent annealing on photoluminescence around 1.54μm from Er-containing ZnO'. Together they form a unique fingerprint.

  • Cite this

    Zhou, Z., Sato, N., Komaki, T., Koizumi, A., Komori, T., Morinaga, M., Fujiwara, Y., & Takeda, Y. (2005). Effects of S-doping and subsequent annealing on photoluminescence around 1.54μm from Er-containing ZnO. Materials Science Forum, 475-479(II), 1125-1128. https://doi.org/10.4028/0-87849-960-1.1125