We studied the generation of dislocations during an ESD event by electrothermal and mechanical stress simulations based on analysis of critical mechanical stress for defect formation. We found the local thermal stress by ESD generates dislocations cooperatively with the residual mechanical stress in the Si substrate due to field oxidation. This means that process-induced mechanical stress is another key factor for controlling ESD performance, which will be important especially in low-power applications with severe leak requirements.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1995 Dec 1|
|Event||Proceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn|
Duration: 1995 Jun 6 → 1995 Jun 8
ASJC Scopus subject areas
- Electrical and Electronic Engineering