Effects of O2 and N2 flow rate on the electrical properties of Fe-O-N thin films

Yukiko Ogawa; Daisuke Ando; Yuji Sutou; Junichi Koike

doi:10.2320/matertrans.M2014089

Effects of O₂ and N₂ flow rate on the electrical properties of Fe-O-N thin films

Yukiko Ogawa, Daisuke Ando, Yuji Sutou, Junichi Koike

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report the dependence of electrical properties of Fe-O-N thin films on the deposition condition as well as on O₂ and N₂ gas flow rate. Fe-O-N films were deposited by reactive sputtering using O₂ and N₂ as reactive gas. The electrical resistivity of Fe-O-N films increased with increasing O₂ and N₂ gas flow rate. The resistivity increase with the O₂ flow rate was due to structure change from a mixed phase of metallic Fe+Fe₃O₄, to a mixed phase of FeO+α-Fe₂O₃, and to a single phase of α-Fe₂O₃, as evidenced by XPS analysis of Fe 2p core excitation peaks. Meanwhile, the resistivity increase with the N₂ flow rate was due to structure change from a metallic Fe, to a mixed phase of metallic Fe+Fe₃O₄, and to a single phase of Fe₃O₄.

Original language	English
Pages (from-to)	1606-1610
Number of pages	5
Journal	Materials Transactions
Volume	55
Issue number	10
DOIs	https://doi.org/10.2320/matertrans.M2014089
Publication status	Published - 2014 Jan 1

Keywords

Effects of oxygen and nitrogen flow rate
Electrical resistivity
Iron oxide
Nitrogen-doped

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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abstract = "We report the dependence of electrical properties of Fe-O-N thin films on the deposition condition as well as on O2 and N2 gas flow rate. Fe-O-N films were deposited by reactive sputtering using O2 and N2 as reactive gas. The electrical resistivity of Fe-O-N films increased with increasing O2 and N2 gas flow rate. The resistivity increase with the O2 flow rate was due to structure change from a mixed phase of metallic Fe+Fe3O4, to a mixed phase of FeO+α-Fe2O3, and to a single phase of α-Fe2O3, as evidenced by XPS analysis of Fe 2p core excitation peaks. Meanwhile, the resistivity increase with the N2 flow rate was due to structure change from a metallic Fe, to a mixed phase of metallic Fe+Fe3O4, and to a single phase of Fe3O4.",

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AU - Ogawa, Yukiko

AU - Ando, Daisuke

AU - Sutou, Yuji

AU - Koike, Junichi

PY - 2014/1/1

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N2 - We report the dependence of electrical properties of Fe-O-N thin films on the deposition condition as well as on O2 and N2 gas flow rate. Fe-O-N films were deposited by reactive sputtering using O2 and N2 as reactive gas. The electrical resistivity of Fe-O-N films increased with increasing O2 and N2 gas flow rate. The resistivity increase with the O2 flow rate was due to structure change from a mixed phase of metallic Fe+Fe3O4, to a mixed phase of FeO+α-Fe2O3, and to a single phase of α-Fe2O3, as evidenced by XPS analysis of Fe 2p core excitation peaks. Meanwhile, the resistivity increase with the N2 flow rate was due to structure change from a metallic Fe, to a mixed phase of metallic Fe+Fe3O4, and to a single phase of Fe3O4.

AB - We report the dependence of electrical properties of Fe-O-N thin films on the deposition condition as well as on O2 and N2 gas flow rate. Fe-O-N films were deposited by reactive sputtering using O2 and N2 as reactive gas. The electrical resistivity of Fe-O-N films increased with increasing O2 and N2 gas flow rate. The resistivity increase with the O2 flow rate was due to structure change from a mixed phase of metallic Fe+Fe3O4, to a mixed phase of FeO+α-Fe2O3, and to a single phase of α-Fe2O3, as evidenced by XPS analysis of Fe 2p core excitation peaks. Meanwhile, the resistivity increase with the N2 flow rate was due to structure change from a metallic Fe, to a mixed phase of metallic Fe+Fe3O4, and to a single phase of Fe3O4.

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