Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar (000-1) p-type GaN grown by metalorganic vapor phase epitaxy

Ryohei Nonoda, Kanako Shojiki, Tomoyuki Tanikawa, Shigeyuki Kuboya, Ryuji Katayama, Takashi Matsuoka

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2 Citations (Scopus)

Abstract

The effects of growth conditions such as Mg/Ga and V/III ratios on the properties of N-polar (000-1) p-type GaN grown by metalorganic vapor phase epitaxy were studied. Photoluminescence spectra from Mg-doped GaN depended on Mg/Ga and V/III ratios. For the lightly doped samples, the band-to-acceptor emission was observed at 3.3 eV and its relative intensity decreased with increasing V/III ratio. For the heavily doped samples, the donor-acceptor pair emission was observed at 2.8 eV and its peak intensity monotonically decreased with V/III ratio. The hole concentration was maximum for the Mg/Ga ratio. This is the same tendency as in group-III polar (0001) growth. The V/III ratio also reduced the hole concentration. The higher V/III ratio reduced the concentration of residual donors such as oxygen by substituting nitrogen atoms. The surface became rougher with increasing V/III ratio and the hillock density increased.

Original languageEnglish
Article number05FE01
JournalJapanese journal of applied physics
Volume55
Issue number5
DOIs
Publication statusPublished - 2016 May 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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