Effects of metal buffer layer on the morphology of the ZnO columns

Xia Feng, Xiaoli Yuan, Takashi Sekiguchi, Masami Terauchi, Shin Tsunekawa, Shun Ito, Junyong Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ZnO columns with different morphologies were grown on Au- and Cu-buffer layers deposited on Si substrates. This indicates that the metal buffer layer will affect the growth rates along different directions. The theoretical calculation shows that O atoms are favourably adsorbed on the hcp sites on both the Au (111) and the Cu (111) surfaces. However, the adsorbed Zn atoms are stabilized on the top site of the O atoms on the Au surface while they are favorable on the fee sites on the Cu surface. This suggests that the different morphologies initiate from the different adsorption sites of Zn atoms on the two metal surfaces.

Original languageEnglish
Title of host publication2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Pages156-159
Number of pages4
DOIs
Publication statusPublished - 2005 Dec 1
Event2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 - Beijing, China
Duration: 2004 Sep 202004 Sep 25

Publication series

NameIEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
Volume2005

Other

Other2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
CountryChina
CityBeijing
Period04/9/2004/9/25

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Feng, X., Yuan, X., Sekiguchi, T., Terauchi, M., Tsunekawa, S., Ito, S., & Kang, J. (2005). Effects of metal buffer layer on the morphology of the ZnO columns. In 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 (pp. 156-159). [1511407] (IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC; Vol. 2005). https://doi.org/10.1109/SIM.2005.1511407