Effects of magnetic field on the pseudogap in the Kondo semiconductor CeRhAs

Shunsuke Yoshii, K. Kindo, T. Sasakawa, T. Suemitsu, T. Takabatake

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The magnetization and magnetoresistance of single-crystalline CeRhAs, which is the so-called Kondo semiconductor with an energygap of ∼280 K, have been measured in pulsed magnetic field up to 55 T. At 1.3 K, the slopes of the magnetization M for H∥b and H∥c decrease slightly at around 16 and 13 T, respectively, while M(H∥a) shows monotonous dependence. Weak anisotropy is observed on the whole, Mb(H)>Mc(H)>Ma(H). Mb(H) reaches only to 0.07 μB/f.u. at 55 T, which indicates the non-magnetic state being stable even in the high magnetic field. Strongly anisotropic behaviors are observed in the magnetoresistance. The longitudinal magnetoresistance (LMR) along the b- and c-axis show characteristic structures partly associated with the anomalies of the magnetizations, while the LMR along the a-axis shows only a broad maximum. The transverse magnetoresistances (TMR) for I∥b and I∥c follow the relation Δρ(H)/ρ(0)∝Hα(α=1.5-1.7) below 5 T, whereas TMR for I∥a exhibits only the weak field dependence. These results suggest the existence of a narrow and anisotropic structure within the wide pseudogap structure in the density of states.

Original languageEnglish
Pages (from-to)112-116
Number of pages5
JournalJournal of Magnetism and Magnetic Materials
Volume278
Issue number1-2
DOIs
Publication statusPublished - 2004 Jul 1

Keywords

  • CeRhAs
  • High magnetic field
  • Kondo semiconductor
  • Magnetization
  • Magnetoresistance
  • Pseudogap

ASJC Scopus subject areas

  • Condensed Matter Physics

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