Effects of light pulse duration on excimer-laser crystallization characteristics of silicon thin films

Ryoichi Ishihara; Wen Chang Yeh; Takeo Hattori; Masakiyo Matsumura

doi:10.1143/JJAP.34.1759

Effects of light pulse duration on excimer-laser crystallization characteristics of silicon thin films

Ryoichi Ishihara, Wen Chang Yeh, Takeo Hattori, Masakiyo Matsumura

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

The waveform of an excimer-laser light pulse has been varied using two laser systems with a delayed trigger. The effects of the pulse duration on the physical properties of crystallized silicon thin films were studied. Fromthe results that threshold energies for crystallization, amorphization and ablation increased in proportion to thesquare root of light pulse duration, their critical temperatures were estimated to be 1000°C, 1800°C and 2700°C, respectively. It was found that the critical temperature for i-crystallzation is changed from about 2600° C for athin film under short pulse duration conditions to 1800°C for a thick film under long pulse duration conditions.The long pulse is effective, but not drastic, in improving the poly-crystallized silicon film quality.

Original language	English
Pages (from-to)	1759-1764
Number of pages	6
Journal	Japanese Journal of Applied Physics
Volume	34
Issue number	4R
DOIs	https://doi.org/10.1143/JJAP.34.1759
Publication status	Published - 1995 Jan 1

Keywords

Amorphization
Crystallized silicon
Excimer-laser crystallization
Light pulse duration
Thin film transistor
Vaporization
μ-crystallization

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Effects of light pulse duration on excimer-laser crystallization characteristics of silicon thin films",

abstract = "The waveform of an excimer-laser light pulse has been varied using two laser systems with a delayed trigger. The effects of the pulse duration on the physical properties of crystallized silicon thin films were studied. Fromthe results that threshold energies for crystallization, amorphization and ablation increased in proportion to thesquare root of light pulse duration, their critical temperatures were estimated to be 1000°C, 1800°C and 2700°C, respectively. It was found that the critical temperature for i-crystallzation is changed from about 2600° C for athin film under short pulse duration conditions to 1800°C for a thick film under long pulse duration conditions.The long pulse is effective, but not drastic, in improving the poly-crystallized silicon film quality.",

keywords = "Amorphization, Crystallized silicon, Excimer-laser crystallization, Light pulse duration, Thin film transistor, Vaporization, μ-crystallization",

author = "Ryoichi Ishihara and Yeh, {Wen Chang} and Takeo Hattori and Masakiyo Matsumura",

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AU - Ishihara, Ryoichi

AU - Yeh, Wen Chang

AU - Hattori, Takeo

AU - Matsumura, Masakiyo

PY - 1995/1/1

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N2 - The waveform of an excimer-laser light pulse has been varied using two laser systems with a delayed trigger. The effects of the pulse duration on the physical properties of crystallized silicon thin films were studied. Fromthe results that threshold energies for crystallization, amorphization and ablation increased in proportion to thesquare root of light pulse duration, their critical temperatures were estimated to be 1000°C, 1800°C and 2700°C, respectively. It was found that the critical temperature for i-crystallzation is changed from about 2600° C for athin film under short pulse duration conditions to 1800°C for a thick film under long pulse duration conditions.The long pulse is effective, but not drastic, in improving the poly-crystallized silicon film quality.

AB - The waveform of an excimer-laser light pulse has been varied using two laser systems with a delayed trigger. The effects of the pulse duration on the physical properties of crystallized silicon thin films were studied. Fromthe results that threshold energies for crystallization, amorphization and ablation increased in proportion to thesquare root of light pulse duration, their critical temperatures were estimated to be 1000°C, 1800°C and 2700°C, respectively. It was found that the critical temperature for i-crystallzation is changed from about 2600° C for athin film under short pulse duration conditions to 1800°C for a thick film under long pulse duration conditions.The long pulse is effective, but not drastic, in improving the poly-crystallized silicon film quality.

KW - Amorphization

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KW - Thin film transistor

KW - Vaporization

KW - μ-crystallization

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