Effects of laser power on the growth of polycrystalline AlN films by laser chemical vapor deposition method

Yu You, Akihiko Ito, Rong Tu, Takashi Goto

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Polycrystalline aluminum nitride (AlN) films were prepared by laser chemical vapor deposition method using aluminum acetylacetonate and ammonia as source materials. The effects of deposition conditions on the crystal phase, composition and microstructure were investigated. Polycrystalline AlN films were prepared at a laser power above 100. W and a deposition temperature above 803. K. The microstructure of AlN film changed from aggregated grains to faceted grains to pyramidal grains with increasing laser power and with decreasing total pressure •AlN polycrystalline films were prepared by laser chemical vapor deposition.•Laser irradiation accelerates chemical reactions and promotes AlN grain growth.•The microstructure of AlN film depends on laser power and total pressure.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalSurface and Coatings Technology
Volume232
DOIs
Publication statusPublished - 2013 Oct 15

Keywords

  • AlN film
  • Laser chemical vapor deposition
  • Microstructure

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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