Effects of ion implantation damage on elevated source/drain formation for ultrathin body silicon on insulator metal oxide semiconductor field-effect transistor

Hyuckjae Oh, Takeshi Sakaguchi, Takafumi Fukushima, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

For high-speed and low-power performance, ultrathin body (UTB) silicon on insulator (SOI) metal oxide semiconductor field-effect semiconductors (MOSFETs) with an elevated source/drain (ESD) have been investigated using selectively epitaxial growth (SEG) technology. In this work, we found that the morphology of a SEG layer on an ultrathin Si film and the crystallinity of the top Si film are strongly dependent on ion implantation damage. The morphology and surface roughness of SEG layers were investigated by field emission scanning electron microscopy (FE-SEM) and the crystallinities of the top silicon films with and without ion implantation were characterized by atomic force microscopy (AFM) and Rutherford backscattering spectroscopy (RBS), respectively. Furthermore, to suppress ion implantation damage, a SEG layer was formed before ion implantation for source drain extension (SDE) formation by the sacrificial sidewall spacer method. As results, UTB SOI-MOSFETs with a flat ESD were successfully fabricated by the proposed method.

Original languageEnglish
Pages (from-to)2965-2969
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
Publication statusPublished - 2006 Apr 25

Keywords

  • Crystallinity
  • ESD
  • Ion implantation
  • SEG
  • Sacrificial sidewall
  • Silicon on insulator

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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