TY - JOUR
T1 - Effects of ion-bombardment-assist and high temperature on growth of zinc oxide films by microwave excited high density plasma enhanced metal organic chemical vapor deposition
AU - Asahara, Hirokazu
AU - Inokuchi, Atsutoshi
AU - Watanuki, Kohei
AU - Hirayama, Masaki
AU - Teramoto, Akinobu
AU - Ohmi, Tadahiro
PY - 2009/4/1
Y1 - 2009/4/1
N2 - In this paper we describe the growth of zinc oxide (ZnO) films on a-plane sapphire substrates by plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) employing microwave excited high-density plasma. In detail, we discuss the effects of ion-bombardmentassist and high temperature on structural properties, electrical properties, optical properties, impurity concentration and thermostability by X-ray diffraction (XRD), field emission scanning electron microscopy, Hall effect measurement at room temperature, photoluminescence, secondary ion mass spectrometry and thermal desorption spectroscopy. Ion-bombardment energy is controlled by the condition of radiofrequency (RF) self bias. Moderate ion-bombardment enhances crystallinity, mobility and thermostability, and reduces concentrations of carbon and hydrogen in the films. By raising the growth temperature up to 550 °C, the qualities of films are improved. High quality ZnO film was successfully grown at 550 °C, which is a relatively low temperature compared to general MOCVD. Its full width at half maximum (FWHM) of XRD (0002) rocking curve, carrier concentration and mobility are 0.12°, 5 × 1016/cm3, and 89cm 2/(V·s), respectively.
AB - In this paper we describe the growth of zinc oxide (ZnO) films on a-plane sapphire substrates by plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) employing microwave excited high-density plasma. In detail, we discuss the effects of ion-bombardmentassist and high temperature on structural properties, electrical properties, optical properties, impurity concentration and thermostability by X-ray diffraction (XRD), field emission scanning electron microscopy, Hall effect measurement at room temperature, photoluminescence, secondary ion mass spectrometry and thermal desorption spectroscopy. Ion-bombardment energy is controlled by the condition of radiofrequency (RF) self bias. Moderate ion-bombardment enhances crystallinity, mobility and thermostability, and reduces concentrations of carbon and hydrogen in the films. By raising the growth temperature up to 550 °C, the qualities of films are improved. High quality ZnO film was successfully grown at 550 °C, which is a relatively low temperature compared to general MOCVD. Its full width at half maximum (FWHM) of XRD (0002) rocking curve, carrier concentration and mobility are 0.12°, 5 × 1016/cm3, and 89cm 2/(V·s), respectively.
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U2 - 10.1143/JJAP.48.04C135
DO - 10.1143/JJAP.48.04C135
M3 - Article
AN - SCOPUS:77952538347
VL - 48
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04C135
ER -