Effects of interlayer and annealing on chemical states of HfO2 gate insulators studied by photoemission spectroscopy

S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Ono, M. Niwa, K. Usuda, G. L. Liu

Research output: Contribution to journalArticlepeer-review

51 Citations (Scopus)

Abstract

The effects of Hf-metal predeposition and annealing on chemical states of HfO2 gate insulators was investigated. The photoemission spectroscopy was used for the study. It was observed that the growth of interface layer was effectively reduced by Hf-metal predeposition. The annealing at 1000 °C was found to cause the formation of metallic Hf and Hf-silicide clusters in the gate insulators.

Original languageEnglish
Pages (from-to)2328-2330
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number13
DOIs
Publication statusPublished - 2004 Mar 29

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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