The effects of Hf-metal predeposition and annealing on chemical states of HfO2 gate insulators was investigated. The photoemission spectroscopy was used for the study. It was observed that the growth of interface layer was effectively reduced by Hf-metal predeposition. The annealing at 1000 °C was found to cause the formation of metallic Hf and Hf-silicide clusters in the gate insulators.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)