Effects of interfacial noncollinear magnetic structures on spin-dependent conductance in Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions: A first-principles study

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

We investigate the effects of spin-flip scattering on tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) with half-metallic Co2MnSi (CMS) and MgO on the basis of the first-principles calculations. We found that noncollinear magnetic structures of interfacial Co spin moments resulting from the thermal fluctuations cause spin-flip scattering, leading to a significant reduction of the TMR. Interface states originating from a projection of the majority-spin Δ1 states of CMS in the minority-spin half-metallic gap because of the interfacial noncollinear magnetic structures play an important role in the spin-flip process. From these results, together with an estimated interfacial exchange stiffness constant, we conclude that the TMR ratio at room temperature in MTJs with half-metallic Co-based full-Heusler alloys can be attributed to the spin-flip scattering by the interfacial noncollinear magnetic structures as a result of the thermal fluctuation.

Original languageEnglish
Article number214411
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume83
Issue number21
DOIs
Publication statusPublished - 2011 Jun 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Effects of interfacial noncollinear magnetic structures on spin-dependent conductance in Co<sub>2</sub>MnSi/MgO/Co<sub>2</sub>MnSi magnetic tunnel junctions: A first-principles study'. Together they form a unique fingerprint.

Cite this