Effects of interface roughness on the local valence electronic structure at the SiO2/Si interface: Soft X-ray absorption and emission study

Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, Y. Takata, S. Shin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We investigated effects of interface roughness on the local valence electronic structures at SiCVSi interface in order to clarify the relation between interface structures and interface electronic properties, by using soft X-ray absorption and emission spectroscopy. For atomically smooth interface, the local valence structures depend on intermediate oxidation states at the interface. For atomically rough interface, on the other hand, the local valence structures at the interface show amorphous-like electronic states irrespective of the intermediated oxidation states.

Original languageEnglish
Title of host publicationProceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Pages259-262
Number of pages4
DOIs
Publication statusPublished - 2006 Mar 1
Externally publishedYes
EventICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces - Aix-en-Provence, France
Duration: 2005 Jul 32005 Jul 8

Publication series

NameJournal De Physique. IV : JP
Volume132
ISSN (Print)1155-4339
ISSN (Electronic)1764-7177

Other

OtherICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
CountryFrance
CityAix-en-Provence
Period05/7/305/7/8

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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