Effects of interface electric field on the magnetoresistance in spin devices

T. Tanamoto, M. Ishikawa, T. Inokuchi, H. Sugiyama, Y. Saito

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

An extension of the standard spin diffusion theory is presented by using a quantum diffusion theory via a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. The magnetoresistance (MR) ratio is greatly modified by the DG term through an interface electric field. We have also carried out spin injection and detection measurements using four-terminal Si devices. The local measurement shows that the MR ratio changes depending on the current direction. We show that the change of the MR ratio depending on the current direction comes from the DG term regarding the asymmetry of the two interface electronic structures.

Original languageEnglish
Article number163907
JournalJournal of Applied Physics
Volume115
Issue number16
DOIs
Publication statusPublished - 2014 Apr 28
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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