Effects of hydrogen plasma treatment on the 1.54 μm luminescence of erbium-doped porous silicon

Tohru Dejima, Riichiro Saito, Shigemi Yugo, Hideo Isshiki, Tadamasa Kimura

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Well resolved, sharp photoluminescence (PL) peaks of Er3+ (4f11) ions at ∼1.54 μm are obtained from Er-doped porous silicon (PS:Er) on which a hydrogen plasma treatment is carried out after electrochemical incorporation of Er3+ions into porous silicon. The full width at half maximum (FWHM) of the 1.538 μm main peak at 20 K is less than 1 nm, which is much smaller than that obtained from PS:Er samples annealed in a H2 or O2 flow (FWHM 7-10 nm), and is comparable to that of Er-doped crystalline silicon. The thermal quenching of the PL intensity is, however, relatively small, the PL intensity decreasing only by a factor of 10 from 20 to 300 K.

Original languageEnglish
Pages (from-to)1036-1040
Number of pages5
JournalJournal of Applied Physics
Volume84
Issue number2
DOIs
Publication statusPublished - 1998 Jul 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Effects of hydrogen plasma treatment on the 1.54 μm luminescence of erbium-doped porous silicon'. Together they form a unique fingerprint.

Cite this