Effects of hydrogen on the properties of Si-incorporated diamond-like carbon films prepared by pulsed laser deposition

H. Nakazawa, R. Osozawa, T. Okuzaki, N. Sato, M. Suemitsu, T. Abe

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We have deposited unhydrogenated and hydrogenated Si-incorporated DLC (Si-DLC) films by pulsed laser deposition using KrF excimer laser, and systematically examined the structure and the mechanical and tribological properties of the films. Hydrogenated Si-DLC films were prepared by atomic-hydrogen irradiation during deposition. The Si/(Si+C) ratio in DLC films increased by atomic-hydrogen irradiation during deposition, indicating that the hydrogen etching is more effective for C atoms compared with Si atoms. The formation of Si-C bonds in the films and silicon oxides only at the surfaces was confirmed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. It was found that the atomic-hydrogen irradiation led to the formation of Si-H bonds to prevent the surface oxidation of the Si-DLC films. The scratch tests revealed that the critical loads of the films deposited with hydrogen were higher than those of the films deposited without hydrogen. We found that the moderately hydrogen-irradiated Si-DLC films tended to have higher wear resistance than the unhydrogenated Si-DLC films.

Original languageEnglish
Pages (from-to)485-491
Number of pages7
JournalDiamond and Related Materials
Volume20
Issue number4
DOIs
Publication statusPublished - 2011 Apr

Keywords

  • Diamond-like carbon
  • Hydrogen
  • Pulsed laser deposition
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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