Abstract
The crystallinity of single-crystal Al(110) film grown on a vicinal Si(100) substrate has been improved by adding a small amount of hydrogen (0.5%) into the sputtering gas (Ar) and applying a positive substrate bias voltage. By utilizing these effects and grazing incidence growth, the growth temperature can be lowered to ≤200°C, resulting in a better surface morphology. The excess amount of hydrogen (5%) and negative substrate bias cause degradation of the film quality. The growth model involving the roles of hydrogen and substrate bias has also been proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 459-461 |
| Number of pages | 3 |
| Journal | Japanese journal of applied physics |
| Volume | 33 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1994 Jan 1 |
Keywords
- Al crystal on Si
- Grazing incidence growth
- Hydrogen in sputter gas
- Migration enhancement
- Substrate bias
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Yokoyama, S., Ichikawa, H., Ichikawa, Y., & Koyanagi, M. (1994). Effects of hydrogen and bias on single-crystal A1 growth on vicinal Si by dc magnetron sputtering. Japanese journal of applied physics, 33(1), 459-461. https://doi.org/10.1143/JJAP.33.459