Abstract
The crystallinity of single-crystal Al(110) film grown on a vicinal Si(100) substrate has been improved by adding a small amount of hydrogen (0.5%) into the sputtering gas (Ar) and applying a positive substrate bias voltage. By utilizing these effects and grazing incidence growth, the growth temperature can be lowered to ≤200°C, resulting in a better surface morphology. The excess amount of hydrogen (5%) and negative substrate bias cause degradation of the film quality. The growth model involving the roles of hydrogen and substrate bias has also been proposed.
Original language | English |
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Pages (from-to) | 459-461 |
Number of pages | 3 |
Journal | Japanese journal of applied physics |
Volume | 33 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1994 |
Externally published | Yes |
Keywords
- Al crystal on Si
- Grazing incidence growth
- Hydrogen in sputter gas
- Migration enhancement
- Substrate bias
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)