Effects of hydrogen and bias on single-crystal A1 growth on vicinal Si by dc magnetron sputtering

Shin Yokoyama, Hiroshi Ichikawa, Yoshiyuki Ichikawa, Mitsumasa Koyanagi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The crystallinity of single-crystal Al(110) film grown on a vicinal Si(100) substrate has been improved by adding a small amount of hydrogen (0.5%) into the sputtering gas (Ar) and applying a positive substrate bias voltage. By utilizing these effects and grazing incidence growth, the growth temperature can be lowered to ≤200°C, resulting in a better surface morphology. The excess amount of hydrogen (5%) and negative substrate bias cause degradation of the film quality. The growth model involving the roles of hydrogen and substrate bias has also been proposed.

Original languageEnglish
Pages (from-to)459-461
Number of pages3
JournalJapanese journal of applied physics
Volume33
Issue number1
DOIs
Publication statusPublished - 1994 Jan 1

Keywords

  • Al crystal on Si
  • Grazing incidence growth
  • Hydrogen in sputter gas
  • Migration enhancement
  • Substrate bias

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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