Effects of hydrogen and bias on single-crystal A1 growth on vicinal Si by dc magnetron sputtering

Shin Yokoyama; Hiroshi Ichikawa; Yoshiyuki Ichikawa; Mitsumasa Koyanagi

doi:10.1143/JJAP.33.459

Effects of hydrogen and bias on single-crystal A1 growth on vicinal Si by dc magnetron sputtering

Shin Yokoyama, Hiroshi Ichikawa, Yoshiyuki Ichikawa, Mitsumasa Koyanagi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The crystallinity of single-crystal Al(110) film grown on a vicinal Si(100) substrate has been improved by adding a small amount of hydrogen (0.5%) into the sputtering gas (Ar) and applying a positive substrate bias voltage. By utilizing these effects and grazing incidence growth, the growth temperature can be lowered to ≤200°C, resulting in a better surface morphology. The excess amount of hydrogen (5%) and negative substrate bias cause degradation of the film quality. The growth model involving the roles of hydrogen and substrate bias has also been proposed.

Original language	English
Pages (from-to)	459-461
Number of pages	3
Journal	Japanese journal of applied physics
Volume	33
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.33.459
Publication status	Published - 1994 Jan 1

Keywords

Al crystal on Si
Grazing incidence growth
Hydrogen in sputter gas
Migration enhancement
Substrate bias

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Effects of hydrogen and bias on single-crystal A1 growth on vicinal Si by dc magnetron sputtering",

abstract = "The crystallinity of single-crystal Al(110) film grown on a vicinal Si(100) substrate has been improved by adding a small amount of hydrogen (0.5%) into the sputtering gas (Ar) and applying a positive substrate bias voltage. By utilizing these effects and grazing incidence growth, the growth temperature can be lowered to ≤200°C, resulting in a better surface morphology. The excess amount of hydrogen (5%) and negative substrate bias cause degradation of the film quality. The growth model involving the roles of hydrogen and substrate bias has also been proposed.",

keywords = "Al crystal on Si, Grazing incidence growth, Hydrogen in sputter gas, Migration enhancement, Substrate bias",

author = "Shin Yokoyama and Hiroshi Ichikawa and Yoshiyuki Ichikawa and Mitsumasa Koyanagi",

year = "1994",

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T1 - Effects of hydrogen and bias on single-crystal A1 growth on vicinal Si by dc magnetron sputtering

AU - Yokoyama, Shin

AU - Ichikawa, Hiroshi

AU - Ichikawa, Yoshiyuki

AU - Koyanagi, Mitsumasa

PY - 1994/1/1

Y1 - 1994/1/1

N2 - The crystallinity of single-crystal Al(110) film grown on a vicinal Si(100) substrate has been improved by adding a small amount of hydrogen (0.5%) into the sputtering gas (Ar) and applying a positive substrate bias voltage. By utilizing these effects and grazing incidence growth, the growth temperature can be lowered to ≤200°C, resulting in a better surface morphology. The excess amount of hydrogen (5%) and negative substrate bias cause degradation of the film quality. The growth model involving the roles of hydrogen and substrate bias has also been proposed.

AB - The crystallinity of single-crystal Al(110) film grown on a vicinal Si(100) substrate has been improved by adding a small amount of hydrogen (0.5%) into the sputtering gas (Ar) and applying a positive substrate bias voltage. By utilizing these effects and grazing incidence growth, the growth temperature can be lowered to ≤200°C, resulting in a better surface morphology. The excess amount of hydrogen (5%) and negative substrate bias cause degradation of the film quality. The growth model involving the roles of hydrogen and substrate bias has also been proposed.

KW - Al crystal on Si

KW - Grazing incidence growth

KW - Hydrogen in sputter gas

KW - Migration enhancement

KW - Substrate bias

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Effects of hydrogen and bias on single-crystal A1 growth on vicinal Si by dc magnetron sputtering

Abstract

Keywords

ASJC Scopus subject areas

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