Effects of high-energy proton and electron irradiation on GaN Schottky diode

S. Narita, T. Hitora, E. Yamaguchi, Yasuhiro Sakemi, Masatoshi Itoh, H. Yoshida, J. Kasagi, K. Neichi

Research output: Contribution to journalArticle

7 Citations (Scopus)


We performed high-energy proton and electron irradiation on a GaN Schottky diode and investigated the effects on its electrical properties. No significant changes in the dark current or breakdown voltage of the diode were observed for fluences up to ∼10 14 protons/ cm2 . The currents increased by a factor of ∼10 3 at a fluence of ∼10 15 protons/ cm2 . The currents also fluctuated unstably at these fluences but this unstable behavior was not observed after a few months. Intrinsic defects may have been induced by particle irradiation and some of them annealed through a relaxation process. Under electron irradiation, the dark currents did not show a notable increase even with the fluence of ∼10 16 electrons/ cm2 .

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Publication statusPublished - 2013 May 3


  • Electron
  • GaN
  • Proton
  • Radiation induced effects
  • Schottky diode

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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