Effects of growth temperature on the surface morphology of silicon thin films on (1 1 1) silicon monocrystalline substrate by liquid phase epitaxy

Toru Ujihara, Eiji Kanda, Kazuo Obara, Kozo Fujiwara, Noritaka Usami, Gen Sazaki, Arnold Alguno, Toetsu Shishido, Kazuo Nakajima

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We investigated the effects of growth temperature on the surface morphology of silicon layers grown by liquid phase epitaxy method on a (111) oriented silicon substrate in a relatively low-temperature range from 600°C to 900°C using Au-Bi alloy solvent. Layers are formed in the following growth sequence: (1) commencing in the form of initial nuclei as starting points of growth, (2) these structures grow along lateral and vertical directions as island structures, and (3) coalesce each other. Moreover, it was made clear that flat layers tend to cover the substrate completely at high growth temperature, in order to clarify the main factor that influences the surface morphology, an empirical model of the growth process was constructed. As a result, the temperature dependence of the surface morphology mainly depends on the temperature dependence of the preferential growth direction of Si on Si (111).

Original languageEnglish
Pages (from-to)467-474
Number of pages8
JournalJournal of Crystal Growth
Volume266
Issue number4
DOIs
Publication statusPublished - 2004 Jun 1

Keywords

  • A1. Morphological stability
  • A3. Liquid phase epitaxy
  • B2. Semiconducting silicon
  • B3. Solar cell

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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