Effects of GaN thin layer on InGaN at electrolyte-semiconductor interface for the application of photoelectrochemical water splitting

Katsushi Fujii, Kayo Koike, Mika Atsumi, Takashi Itoh, Takenari Goto, Takafumi Yao, Masakazu Sugiyama, Yoshiaki Nakano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Photoelectrochemical properties of nitride semiconductors are paid attention due to their possibilities of water splitting by visible light absorption. However, the photocurrent density of InxGa 1-xN, which absorbs visible light, is usually lower than that of GaN, which has larger band-gap and absorbing only UV light. The reasons of this are thought to be the band-edge position at the semiconductor-electrolyte interface and the crystal quality. The conduction band-edge decreases with increasing of indium composition and across the hydrogen generation energy at around the indium composition of 0.2. This means that the hydrogen generation ability decreases with increasing of indium composition. Low crystal quality is obtained because the lower growth temperature of InxGa1-xN than that of GaN to achieve the indium incorporation. In order to improve the photocurrent density, band-edge energy control and quantum tunneling effect are tried using the structure of thin GaN layer on InxGa1-xN here. The effect for the photocurrent densities is also discussed.

Original languageEnglish
Title of host publicationAdvanced Materials for Solar-Fuel Generation
Pages16-21
Number of pages6
DOIs
Publication statusPublished - 2011 Dec 1
Event2011 MRS Fall Meeting - Boston, MA, United States
Duration: 2011 Nov 282012 Dec 2

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1387
ISSN (Print)0272-9172

Other

Other2011 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/11/2812/12/2

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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