Effects of Ga content on optical and scintillation properties in Ce3+doped YGd2(Al,Ga)5O12 scintillators

Warut Chewpraditkul; Nakarin Pattanaboonmee; Kriangkrai Wantong; Weerapong Chewpraditkul; Vladimir Babin; Martin Nikl; Kei Kamada; Akira Yoshikawa

doi:10.4028/www.scientific.net/KEM.675-676.552

Effects of Ga content on optical and scintillation properties in Ce³⁺doped YGd₂(Al,Ga)₅O₁₂ scintillators

Warut Chewpraditkul, Nakarin Pattanaboonmee, Kriangkrai Wantong, Weerapong Chewpraditkul, Vladimir Babin, Martin Nikl, Kei Kamada, Akira Yoshikawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The optical and scintillation properties of Ce³⁺-doped YGd₂(Al,Ga)₅O₁₂ single crystal scintillators were investigated. The Ce³⁺ 5d-4f emission was blue-shifted with increasing Ga content due to the decrease of the crystal field strength. Temperature dependence of the photoluminescence decay times was measured and the thermal activation energy for the luminescence quenching was calculated. Light yield (LY) and its dependence on an integration time were measured under γ-ray excitation. The fast component content in the scintillation response increases with increasing Ga content. The YGd₂Al₂Ga₃O₁₂:Ce sample showed a high LY of 38,000 photons/MeV. The decrease of LY value observed for a YGd₂Al₁Ga₄O₁₂:Ce sample is mainly due to the thermal ionization of the 5d₁ excited state of the Ce³⁺ emission center to the conduction band.

Original language	English
Title of host publication	Applied Physics and Material Applications II
Editors	Witthaya Mekhum, Anat Thapinta, Prungsak Attaphut, Narong Sangwaranatee, Pichet Limsuwan, Hong Joo Kim, Mitra Djamal, Jakrapong Kaewkhao, Jakrapong Kaewkhao
Publisher	Trans Tech Publications Ltd
Pages	552-555
Number of pages	4
ISBN (Print)	9783038356837
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.675-676.552
Publication status	Published - 2016
Event	2nd International Conference on Applied Physics and Material Applications, ICAPMA 2015 - Pattaya, Thailand Duration: 2015 May 28 → 2015 May 30

Publication series

Name	Key Engineering Materials
Volume	675-676
ISSN (Print)	1013-9826
ISSN (Electronic)	1662-9795

Other

Other	2nd International Conference on Applied Physics and Material Applications, ICAPMA 2015
Country/Territory	Thailand
City	Pattaya
Period	15/5/28 → 15/5/30

Keywords

Light yield
Luminescence
Scintillation
YGd(Al,Ga)O:Ce

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/KEM.675-676.552

Cite this

Chewpraditkul, W., Pattanaboonmee, N., Wantong, K., Chewpraditkul, W., Babin, V., Nikl, M., Kamada, K., & Yoshikawa, A. (2016). Effects of Ga content on optical and scintillation properties in Ce³⁺doped YGd₂(Al,Ga)₅O₁₂ scintillators. In W. Mekhum, A. Thapinta, P. Attaphut, N. Sangwaranatee, P. Limsuwan, H. J. Kim, M. Djamal, J. Kaewkhao, & J. Kaewkhao (Eds.), Applied Physics and Material Applications II (pp. 552-555). (Key Engineering Materials; Vol. 675-676). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.675-676.552

Effects of Ga content on optical and scintillation properties in Ce³⁺doped YGd₂(Al,Ga)₅O₁₂ scintillators. / Chewpraditkul, Warut; Pattanaboonmee, Nakarin; Wantong, Kriangkrai; Chewpraditkul, Weerapong; Babin, Vladimir; Nikl, Martin; Kamada, Kei ; Yoshikawa, Akira.

Applied Physics and Material Applications II. ed. / Witthaya Mekhum; Anat Thapinta; Prungsak Attaphut; Narong Sangwaranatee; Pichet Limsuwan; Hong Joo Kim; Mitra Djamal; Jakrapong Kaewkhao; Jakrapong Kaewkhao. Trans Tech Publications Ltd, 2016. p. 552-555 (Key Engineering Materials; Vol. 675-676).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chewpraditkul, W, Pattanaboonmee, N, Wantong, K, Chewpraditkul, W, Babin, V, Nikl, M, Kamada, K & Yoshikawa, A 2016, Effects of Ga content on optical and scintillation properties in Ce³⁺doped YGd₂(Al,Ga)₅O₁₂ scintillators. in W Mekhum, A Thapinta, P Attaphut, N Sangwaranatee, P Limsuwan, HJ Kim, M Djamal, J Kaewkhao & J Kaewkhao (eds), Applied Physics and Material Applications II. Key Engineering Materials, vol. 675-676, Trans Tech Publications Ltd, pp. 552-555, 2nd International Conference on Applied Physics and Material Applications, ICAPMA 2015, Pattaya, Thailand, 15/5/28. https://doi.org/10.4028/www.scientific.net/KEM.675-676.552

Chewpraditkul W, Pattanaboonmee N, Wantong K, Chewpraditkul W, Babin V, Nikl M et al. Effects of Ga content on optical and scintillation properties in Ce³⁺doped YGd₂(Al,Ga)₅O₁₂ scintillators. In Mekhum W, Thapinta A, Attaphut P, Sangwaranatee N, Limsuwan P, Kim HJ, Djamal M, Kaewkhao J, Kaewkhao J, editors, Applied Physics and Material Applications II. Trans Tech Publications Ltd. 2016. p. 552-555. (Key Engineering Materials). https://doi.org/10.4028/www.scientific.net/KEM.675-676.552

Chewpraditkul, Warut ; Pattanaboonmee, Nakarin ; Wantong, Kriangkrai ; Chewpraditkul, Weerapong ; Babin, Vladimir ; Nikl, Martin ; Kamada, Kei ; Yoshikawa, Akira. / Effects of Ga content on optical and scintillation properties in Ce³⁺doped YGd₂(Al,Ga)₅O₁₂ scintillators. Applied Physics and Material Applications II. editor / Witthaya Mekhum ; Anat Thapinta ; Prungsak Attaphut ; Narong Sangwaranatee ; Pichet Limsuwan ; Hong Joo Kim ; Mitra Djamal ; Jakrapong Kaewkhao ; Jakrapong Kaewkhao. Trans Tech Publications Ltd, 2016. pp. 552-555 (Key Engineering Materials).

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AU - Wantong, Kriangkrai

AU - Chewpraditkul, Weerapong

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AB - The optical and scintillation properties of Ce3+-doped YGd2(Al,Ga)5O12 single crystal scintillators were investigated. The Ce3+ 5d-4f emission was blue-shifted with increasing Ga content due to the decrease of the crystal field strength. Temperature dependence of the photoluminescence decay times was measured and the thermal activation energy for the luminescence quenching was calculated. Light yield (LY) and its dependence on an integration time were measured under γ-ray excitation. The fast component content in the scintillation response increases with increasing Ga content. The YGd2Al2Ga3O12:Ce sample showed a high LY of 38,000 photons/MeV. The decrease of LY value observed for a YGd2Al1Ga4O12:Ce sample is mainly due to the thermal ionization of the 5d1 excited state of the Ce3+ emission center to the conduction band.

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