TY - GEN
T1 - Effects of Ga content on optical and scintillation properties in Ce3+doped YGd2(Al,Ga)5O12 scintillators
AU - Chewpraditkul, Warut
AU - Pattanaboonmee, Nakarin
AU - Wantong, Kriangkrai
AU - Chewpraditkul, Weerapong
AU - Babin, Vladimir
AU - Nikl, Martin
AU - Kamada, Kei
AU - Yoshikawa, Akira
N1 - Publisher Copyright:
© 2016 Trans Tech Publications, Switzerland.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2016
Y1 - 2016
N2 - The optical and scintillation properties of Ce3+-doped YGd2(Al,Ga)5O12 single crystal scintillators were investigated. The Ce3+ 5d-4f emission was blue-shifted with increasing Ga content due to the decrease of the crystal field strength. Temperature dependence of the photoluminescence decay times was measured and the thermal activation energy for the luminescence quenching was calculated. Light yield (LY) and its dependence on an integration time were measured under γ-ray excitation. The fast component content in the scintillation response increases with increasing Ga content. The YGd2Al2Ga3O12:Ce sample showed a high LY of 38,000 photons/MeV. The decrease of LY value observed for a YGd2Al1Ga4O12:Ce sample is mainly due to the thermal ionization of the 5d1 excited state of the Ce3+ emission center to the conduction band.
AB - The optical and scintillation properties of Ce3+-doped YGd2(Al,Ga)5O12 single crystal scintillators were investigated. The Ce3+ 5d-4f emission was blue-shifted with increasing Ga content due to the decrease of the crystal field strength. Temperature dependence of the photoluminescence decay times was measured and the thermal activation energy for the luminescence quenching was calculated. Light yield (LY) and its dependence on an integration time were measured under γ-ray excitation. The fast component content in the scintillation response increases with increasing Ga content. The YGd2Al2Ga3O12:Ce sample showed a high LY of 38,000 photons/MeV. The decrease of LY value observed for a YGd2Al1Ga4O12:Ce sample is mainly due to the thermal ionization of the 5d1 excited state of the Ce3+ emission center to the conduction band.
KW - Light yield
KW - Luminescence
KW - Scintillation
KW - YGd(Al,Ga)O:Ce
UR - http://www.scopus.com/inward/record.url?scp=84958191222&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84958191222&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.675-676.552
DO - 10.4028/www.scientific.net/KEM.675-676.552
M3 - Conference contribution
AN - SCOPUS:84958191222
SN - 9783038356837
T3 - Key Engineering Materials
SP - 552
EP - 555
BT - Applied Physics and Material Applications II
A2 - Mekhum, Witthaya
A2 - Thapinta, Anat
A2 - Attaphut, Prungsak
A2 - Sangwaranatee, Narong
A2 - Limsuwan, Pichet
A2 - Kim, Hong Joo
A2 - Djamal, Mitra
A2 - Kaewkhao, Jakrapong
A2 - Kaewkhao, Jakrapong
PB - Trans Tech Publications Ltd
T2 - 2nd International Conference on Applied Physics and Material Applications, ICAPMA 2015
Y2 - 28 May 2015 through 30 May 2015
ER -