Effects of fluorocarbon gas species on electrical conductivity and chemical structure of deposited polymer in SiO2 etching processes

T. Shimmura, S. Soda, S. Samukawa, M. Koyanagi, K. Hane

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

The effects of fluorocarbon gas species in SiO2 etching process on electrical conductivity and chemical structure were investigated. It was expected that the deposited fluorocarbon polymers exert an influence on the etching characteristics and charge accumulation in SiO2 contact hole. The electrical conductivity of SiO2 contact holes depends on chemical structure of the deposited fluorocarbon polymers. The results show that the chemical structure of the deposited fluorocarbon polymer depended on nature of the radical species and ion flux.

Original languageEnglish
Pages (from-to)533-538
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number2
Publication statusPublished - 2004 Mar

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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