Effects of fluorocarbon gas species on electrical conductivity and chemical structure of deposited polymer in SiO2 etching processes

T. Shimmura; S. Soda; S. Samukawa; M. Koyanagi; K. Hane

Effects of fluorocarbon gas species on electrical conductivity and chemical structure of deposited polymer in SiO₂ etching processes

T. Shimmura, S. Soda, S. Samukawa, M. Koyanagi, K. Hane

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of fluorocarbon gas species in SiO₂ etching process on electrical conductivity and chemical structure were investigated. It was expected that the deposited fluorocarbon polymers exert an influence on the etching characteristics and charge accumulation in SiO₂ contact hole. The electrical conductivity of SiO₂ contact holes depends on chemical structure of the deposited fluorocarbon polymers. The results show that the chemical structure of the deposited fluorocarbon polymer depended on nature of the radical species and ion flux.

Original language	English
Pages (from-to)	533-538
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	2
Publication status	Published - 2004 Mar

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Effects of fluorocarbon gas species on electrical conductivity and chemical structure of deposited polymer in SiO₂ etching processes. / Shimmura, T.; Soda, S.; Samukawa, S. et al.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 2, 03.2004, p. 533-538.

Research output: Contribution to journal › Article › peer-review

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abstract = "The effects of fluorocarbon gas species in SiO2 etching process on electrical conductivity and chemical structure were investigated. It was expected that the deposited fluorocarbon polymers exert an influence on the etching characteristics and charge accumulation in SiO2 contact hole. The electrical conductivity of SiO2 contact holes depends on chemical structure of the deposited fluorocarbon polymers. The results show that the chemical structure of the deposited fluorocarbon polymer depended on nature of the radical species and ion flux.",

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AU - Hane, K.

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N2 - The effects of fluorocarbon gas species in SiO2 etching process on electrical conductivity and chemical structure were investigated. It was expected that the deposited fluorocarbon polymers exert an influence on the etching characteristics and charge accumulation in SiO2 contact hole. The electrical conductivity of SiO2 contact holes depends on chemical structure of the deposited fluorocarbon polymers. The results show that the chemical structure of the deposited fluorocarbon polymer depended on nature of the radical species and ion flux.

AB - The effects of fluorocarbon gas species in SiO2 etching process on electrical conductivity and chemical structure were investigated. It was expected that the deposited fluorocarbon polymers exert an influence on the etching characteristics and charge accumulation in SiO2 contact hole. The electrical conductivity of SiO2 contact holes depends on chemical structure of the deposited fluorocarbon polymers. The results show that the chemical structure of the deposited fluorocarbon polymer depended on nature of the radical species and ion flux.

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Effects of fluorocarbon gas species on electrical conductivity and chemical structure of deposited polymer in SiO₂ etching processes

Abstract

ASJC Scopus subject areas

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