Effects of fluorocarbon gas species on electrical conductivity and chemical structure of deposited polymer in SiO2 etching processes

T. Shimmura; S. Soda; S. Samukawa; M. Koyanagi; K. Hane

Effects of fluorocarbon gas species on electrical conductivity and chemical structure of deposited polymer in SiO₂ etching processes

T. Shimmura, S. Soda, S. Samukawa, M. Koyanagi, K. Hane

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of fluorocarbon gas species in SiO₂ etching process on electrical conductivity and chemical structure were investigated. It was expected that the deposited fluorocarbon polymers exert an influence on the etching characteristics and charge accumulation in SiO₂ contact hole. The electrical conductivity of SiO₂ contact holes depends on chemical structure of the deposited fluorocarbon polymers. The results show that the chemical structure of the deposited fluorocarbon polymer depended on nature of the radical species and ion flux.

Original language	English
Pages (from-to)	533-538
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	2
Publication status	Published - 2004 Mar

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Effects of fluorocarbon gas species on electrical conductivity and chemical structure of deposited polymer in SiO₂ etching processes. / Shimmura, T.; Soda, S.; Samukawa, S.; Koyanagi, M.; Hane, K.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 2, 03.2004, p. 533-538.

Research output: Contribution to journal › Article › peer-review

@article{d72786263e9c4719b626ea3f5937178d,

title = "Effects of fluorocarbon gas species on electrical conductivity and chemical structure of deposited polymer in SiO2 etching processes",

abstract = "The effects of fluorocarbon gas species in SiO2 etching process on electrical conductivity and chemical structure were investigated. It was expected that the deposited fluorocarbon polymers exert an influence on the etching characteristics and charge accumulation in SiO2 contact hole. The electrical conductivity of SiO2 contact holes depends on chemical structure of the deposited fluorocarbon polymers. The results show that the chemical structure of the deposited fluorocarbon polymer depended on nature of the radical species and ion flux.",

author = "T. Shimmura and S. Soda and S. Samukawa and M. Koyanagi and K. Hane",

year = "2004",

month = mar,

language = "English",

volume = "22",

pages = "533--538",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "2",

}

TY - JOUR

T1 - Effects of fluorocarbon gas species on electrical conductivity and chemical structure of deposited polymer in SiO2 etching processes

AU - Shimmura, T.

AU - Soda, S.

AU - Samukawa, S.

AU - Koyanagi, M.

AU - Hane, K.

PY - 2004/3

Y1 - 2004/3

N2 - The effects of fluorocarbon gas species in SiO2 etching process on electrical conductivity and chemical structure were investigated. It was expected that the deposited fluorocarbon polymers exert an influence on the etching characteristics and charge accumulation in SiO2 contact hole. The electrical conductivity of SiO2 contact holes depends on chemical structure of the deposited fluorocarbon polymers. The results show that the chemical structure of the deposited fluorocarbon polymer depended on nature of the radical species and ion flux.

AB - The effects of fluorocarbon gas species in SiO2 etching process on electrical conductivity and chemical structure were investigated. It was expected that the deposited fluorocarbon polymers exert an influence on the etching characteristics and charge accumulation in SiO2 contact hole. The electrical conductivity of SiO2 contact holes depends on chemical structure of the deposited fluorocarbon polymers. The results show that the chemical structure of the deposited fluorocarbon polymer depended on nature of the radical species and ion flux.

UR - http://www.scopus.com/inward/record.url?scp=2342473910&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2342473910&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:2342473910

VL - 22

SP - 533

EP - 538

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 2

ER -