The effects of fluorocarbon gas species in SiO2 etching process on electrical conductivity and chemical structure were investigated. It was expected that the deposited fluorocarbon polymers exert an influence on the etching characteristics and charge accumulation in SiO2 contact hole. The electrical conductivity of SiO2 contact holes depends on chemical structure of the deposited fluorocarbon polymers. The results show that the chemical structure of the deposited fluorocarbon polymer depended on nature of the radical species and ion flux.
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2004 Mar|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering