TY - JOUR
T1 - Effects of extra metals added in an autoclave during acidic ammonothermal growth of m-plane GaN single crystals using an NH4F mineralizer
AU - Tomida, Daisuke
AU - Bao, Quanxi
AU - Saito, Makoto
AU - Kurimoto, Kohei
AU - Sato, Fukuma
AU - Ishiguro, Tohru
AU - Chichibu, Shigefusa F.
N1 - Funding Information:
Acknowledgments The m-plane GaN seed wafers were supplied by Mitsubishi Chemical Corporation. This work was supported in part by the Project of Strategic Development for Energy Conservation Technology from a NEDO program by METI and “Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials” by MEXT, Japan.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics
PY - 2018/9
Y1 - 2018/9
N2 - The presence of an extra Al metal in an autoclave tremendously improved the overall quality of m-plane GaN single crystals grown by the acidic ammonothermal method using an NH4F mineralizer. Although the growth rate was commonly decreased by adding an extra metal such as Al, Si, Ca, or Ti, the crystal coloration was mostly suppressed and the crystal mosaics were decreased, and the near-band-edge excitonic fine structure was observed in the low-temperature photoluminescence spectrum only when Al was present. The results likely indicate that the extra Al suppressed the incorporation of oxygen into m-planes of GaN owing to the oxygen gettering effect.
AB - The presence of an extra Al metal in an autoclave tremendously improved the overall quality of m-plane GaN single crystals grown by the acidic ammonothermal method using an NH4F mineralizer. Although the growth rate was commonly decreased by adding an extra metal such as Al, Si, Ca, or Ti, the crystal coloration was mostly suppressed and the crystal mosaics were decreased, and the near-band-edge excitonic fine structure was observed in the low-temperature photoluminescence spectrum only when Al was present. The results likely indicate that the extra Al suppressed the incorporation of oxygen into m-planes of GaN owing to the oxygen gettering effect.
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U2 - 10.7567/APEX.11.091002
DO - 10.7567/APEX.11.091002
M3 - Article
AN - SCOPUS:85054293379
VL - 11
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 9
M1 - 091002
ER -