Effects of extra metals added in an autoclave during acidic ammonothermal growth of m-plane GaN single crystals using an NH4F mineralizer

Daisuke Tomida, Quanxi Bao, Makoto Saito, Kohei Kurimoto, Fukuma Sato, Tohru Ishiguro, Shigefusa F. Chichibu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The presence of an extra Al metal in an autoclave tremendously improved the overall quality of m-plane GaN single crystals grown by the acidic ammonothermal method using an NH4F mineralizer. Although the growth rate was commonly decreased by adding an extra metal such as Al, Si, Ca, or Ti, the crystal coloration was mostly suppressed and the crystal mosaics were decreased, and the near-band-edge excitonic fine structure was observed in the low-temperature photoluminescence spectrum only when Al was present. The results likely indicate that the extra Al suppressed the incorporation of oxygen into m-planes of GaN owing to the oxygen gettering effect.

Original languageEnglish
Article number091002
JournalApplied Physics Express
Volume11
Issue number9
DOIs
Publication statusPublished - 2018 Sep

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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