Effects of electron temperature on the quality of a-Si:H and μ

Yuji Kurimoto, Tetsuji Shimizu, Satoru Iizuka, Maki Suemitsu, Noriyoshi Sato

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)


Effects of electron temperature (Te) on the quality of deposited silicon thin film were investigated using a modified magnetron typed plasma source equipped with a Te control system. Two kinds of Si films were prepared; amorphous silicon (a-Si:H) and micro-crystalline silicon (μc-Si). In the a-Si:H deposition, Te reduction from 4.75 eV to 0.4 eV increased the ratio of photo to dark conductivity, σpd, by a factor of 30 and decreased the SiH2 concentration by a factor of two. In the μc-Si deposition, the crystallinity was also improved by a slight reduction of Te. However, we found a presence of an optimum Te(= 3.9 eV) at which the crystal fraction becomes maximum.

Original languageEnglish
Pages (from-to)7-11
Number of pages5
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2002 Mar 22
EventProceedinggs of the 14th Symposium on Plasma Science for Marteri (SPSM-14) - Tokyo, Japan
Duration: 2001 Jun 132001 Jun 14


  • Chemical vapour deposition (CVD)
  • Electron temperature control
  • Plasma processing and deposition
  • Silicon thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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