Abstract
Silicon etching characteristics are investigated by using radio-frequency (rf) biased ultrahigh frequency (UHF) and other conventional plasmas (electron cycotron resonance plasma, inductive coupled plasma, surface wave plasma) determined by using a Cl2 etchant. The silicon etching rate and its pattern dependence are significantly improved by decreasing the electron temperature when supplying a 600-kHz rf bias. In particular, use of the UHF plasma allows high-rate and microloading-free silicon trench etching. It is suggested that a larger number of negative ions are generated in the UHF plasma because of the extremely low electron temperature. The low-frequency bias accelerates the negative and positive ions alternately to the substrate surface. As a result, the low-frequency biased UHF plasma reduces the charge accumulation on the substrate.
Original language | English |
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Pages (from-to) | 1056-1058 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 69 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1996 Aug 19 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)