Effects of electron and atomic hydrogen irradiation on gas-source molecular beam epitaxy of diamond with pure methane

Toshihiko Nishimori, Hitoshi Sakamoto, Yuji Takakuwa, Shozo Kono

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

We investigated the effects of electron and atomic hydrogen irradiation on gas-source molecular beam epitaxy (GSMBE) of diamond with pure methane (CH4). Irradiating the C(001) surface with a 200 eV electron-beam at 800°C enhanced the growth rate (GR) ∼2-5 times over the method without irradiation. By using a CH4 beam decomposed by electron impact in addition to the electron-beam irradiation, the GR was enhanced by > 100 times. However, the grown films contained an appreciable amount of amorphous carbon. By contrast, irradiating the surface with an atomic hydrogen beam enhanced the GR by about five-fold without the concurrent growth of amorphous carbon.

Original languageEnglish
Pages (from-to)463-467
Number of pages5
JournalDiamond and Related Materials
Volume6
Issue number2-4
DOIs
Publication statusPublished - 1997 Mar

Keywords

  • Atomic hydrogen
  • Chemical vapor deposition
  • Diamond
  • Electron

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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