Effects of electro-less Ni layer as barrier/seed layers for high reliable and low cost Cu TSV

K. W. Lee, C. Nagai, A. Nakamura, Jichoru Be, M. Murugesan, Takafumi Fukushima, Tetsu Tanaka, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Effects of electro-less Ni layer as barrier/seed layers were evaluated for high reliable and low cost Cu TSVs. To electrically characterize the effectiveness of a Ni layer as barrier/seed layers for TSV application, we fabricated the trench MOS capacitor with 5μm dia. and 50μm depth TSV array. Via holes were successfully filled by Cu electroplating by using Ni seed layer. To characterize the blocking property of the Ni layer to Cu diffusion, Cu atoms were intentionally diffused from Cu TSV by annealing at 300°C and 400°C. X-ray spectrometer (EDX) and C-t analysis results shows that Cu atoms not diffuse into t h e Si substrate via the Ni layer even after annealing at 400°C. The Ni barrier layer has good blocking properties compared to a PVD barrier layer.

Original languageEnglish
Title of host publication2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479984725
DOIs
Publication statusPublished - 2014
EventInternational 3D Systems Integration Conference, 3DIC 2014 - Kinsdale, Ireland
Duration: 2014 Dec 12014 Dec 3

Other

OtherInternational 3D Systems Integration Conference, 3DIC 2014
CountryIreland
CityKinsdale
Period14/12/114/12/3

Keywords

  • 3D
  • Barrier/seed
  • C-t
  • Cu diffusion
  • Ni layer

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture

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