Effects of elastic stress introduced by a silicon nitride cap on solid-phase crystallization of amorphous silicon

Yasuo Kimura, Masato Kishi, Takashi Katoda

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

Laser Raman spectroscopy is used to study the compressive stress effects introduced by Si3N4 cap on solid-phase crystallization of amorphous Si (a-Si). It is shown that additional cap of SiO2 on a Si3N4 cap increases speed of crystallization while increasing the stress decreases this speed. Tensile stress and relaxed compressive stress in an a-Si film can be introduced by SiO2 cap and Si3N4 cap, respectively.

Original languageEnglish
Pages (from-to)2278-2280
Number of pages3
JournalJournal of Applied Physics
Volume86
Issue number4
DOIs
Publication statusPublished - 1999 Aug 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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