Effects of dopant distribution improvement on optical and scintillation properties for Ce-doped garnet-type single crystals

Yui Yokota, Tetsuo Kudo, Yuji Ohashi, Shunsuke Kurosawa, Kei Kamada, Zhong Zeng, Yoshiyuki Kawazoe, Akira Yoshikawa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Ce-doped garnet-type single crystals with improved dopant distribution were grown by the micro-pulling-down method using a modified Iridium crucible and effects of dopant distribution improvement on the optical and scintillation properties were investigated. Ce-doped Y3Al5O12 (Ce:YAG) and Gd3(Ga,Al)5O12 (Ce:GGAG) single crystals with improved dopant distribution could be grown by a Iridium crucible with five capillaries (5C). The Ce:YAG and Ce:GGAG single crystals (5C) showed higher transmittance than the single crystals grown by an original Iridium crucible with one capillary (1C). In addition, a clear photo-peak could be observed in the pulse-height spectrum of the Ce:YAG single crystal (5C) under γ-ray irradiation while there was no peak in the spectrum of the Ce:YAG single crystal (1C).

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
DOIs
Publication statusAccepted/In press - 2017 Mar 24

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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