It has previously been shown that ultraviolet (UV) ozone oxidation can be utilized for removing carbon contaminants on Si surfaces and forming a thin oxide film which serves as a protective overlayer for chemical attack. In this study, the UV ozone oxidation of a Si surface has been investigated using photoemission spectroscopy with synchrotron radiation and surface infrared spectroscopy in the multiple internal reflection mode. It is shown that during UV ozone oxidation a thin Si02 film approximately 5 A thick, which presumably corresponds to one monolayer of six-member rings of Si04 tetrahedra, is initially formed and subsequently slow” oxidation occurs. It is suggested that the formation of this 5-A-thick oxide film is the key to protecting the Si substrate surface from the adsorption of impurities which would occur if the bare Si surface were exposed to air.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 1992 Sep|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films