Effects of different pretreatments on the surface structure of silicon and the adhesion of metal films

Michio Niwano, Maki Suemitsu, Yutaka Ishibashi, Yuki Takeda, Nobuo Miyamoto

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

It has previously been shown that ultraviolet (UV) ozone oxidation can be utilized for removing carbon contaminants on Si surfaces and forming a thin oxide film which serves as a protective overlayer for chemical attack. In this study, the UV ozone oxidation of a Si surface has been investigated using photoemission spectroscopy with synchrotron radiation and surface infrared spectroscopy in the multiple internal reflection mode. It is shown that during UV ozone oxidation a thin Si02 film approximately 5 A thick, which presumably corresponds to one monolayer of six-member rings of Si04 tetrahedra, is initially formed and subsequently slow” oxidation occurs. It is suggested that the formation of this 5-A-thick oxide film is the key to protecting the Si substrate surface from the adsorption of impurities which would occur if the bare Si surface were exposed to air.

Original languageEnglish
Pages (from-to)3171-3175
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume10
Issue number5
DOIs
Publication statusPublished - 1992 Sep

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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