Effects of deposition parameters of low-temperature GaN layer on the structural and optical properties of cubic GaN epilayers grown on GaAs(001) substrates by MOVPE

Mutsumi Sugiyama; Taiki Nosaka; Kiyomi Nakajima; Parhat Ahmet; Toyomi Aoyama; Toyohiro Chikyow; Shigefusa F. Chichibu

doi:10.1002/pssc.200303410

Effects of deposition parameters of low-temperature GaN layer on the structural and optical properties of cubic GaN epilayers grown on GaAs(001) substrates by MOVPE

Mutsumi Sugiyama, Taiki Nosaka, Kiyomi Nakajima, Parhat Ahmet, Toyomi Aoyama, Toyohiro Chikyow, Shigefusa F. Chichibu

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Effects of low temperature (LT-) GaN insertion on the cubic (c-) GaN thin film growth by metalorganic vapor phase epitaxy were investigated. Approximately 8-10-nm-thick LT-GaN were found to be essential for the growth of the c-GaN overlayer to prevent the films from peeling off from GaAs substrates and from the hexagonal GaN inclusion. When the LT-GaN was thinner than 8 nm, good quality c-GaN was obtained although distinct voids were formed at the c-GaN/GaAs interface. From the cross-sectional transmission electron microscopy (TEM) observation, lateral growth over the voids was found.

Original language	English
Pages (from-to)	2099-2102
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303410
Publication status	Published - 2003 Dec 1
Externally published	Yes
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 2003 May 25 → 2003 May 30

ASJC Scopus subject areas

Condensed Matter Physics

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Effects of deposition parameters of low-temperature GaN layer on the structural and optical properties of cubic GaN epilayers grown on GaAs(001) substrates by MOVPE. / Sugiyama, Mutsumi; Nosaka, Taiki; Nakajima, Kiyomi; Ahmet, Parhat; Aoyama, Toyomi; Chikyow, Toyohiro; Chichibu, Shigefusa F.

In: Physica Status Solidi C: Conferences, No. 7, 01.12.2003, p. 2099-2102.

Research output: Contribution to journal › Conference article › peer-review

Sugiyama, Mutsumi ; Nosaka, Taiki ; Nakajima, Kiyomi ; Ahmet, Parhat ; Aoyama, Toyomi ; Chikyow, Toyohiro ; Chichibu, Shigefusa F. / Effects of deposition parameters of low-temperature GaN layer on the structural and optical properties of cubic GaN epilayers grown on GaAs(001) substrates by MOVPE. In: Physica Status Solidi C: Conferences. 2003 ; No. 7. pp. 2099-2102.

@article{18ea8efa5c17456683db63180f1cdbaa,

title = "Effects of deposition parameters of low-temperature GaN layer on the structural and optical properties of cubic GaN epilayers grown on GaAs(001) substrates by MOVPE",

abstract = "Effects of low temperature (LT-) GaN insertion on the cubic (c-) GaN thin film growth by metalorganic vapor phase epitaxy were investigated. Approximately 8-10-nm-thick LT-GaN were found to be essential for the growth of the c-GaN overlayer to prevent the films from peeling off from GaAs substrates and from the hexagonal GaN inclusion. When the LT-GaN was thinner than 8 nm, good quality c-GaN was obtained although distinct voids were formed at the c-GaN/GaAs interface. From the cross-sectional transmission electron microscopy (TEM) observation, lateral growth over the voids was found.",

author = "Mutsumi Sugiyama and Taiki Nosaka and Kiyomi Nakajima and Parhat Ahmet and Toyomi Aoyama and Toyohiro Chikyow and Chichibu, {Shigefusa F.}",

year = "2003",

month = dec,

day = "1",

doi = "10.1002/pssc.200303410",

language = "English",

pages = "2099--2102",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

}

TY - JOUR

T1 - Effects of deposition parameters of low-temperature GaN layer on the structural and optical properties of cubic GaN epilayers grown on GaAs(001) substrates by MOVPE

AU - Sugiyama, Mutsumi

AU - Nosaka, Taiki

AU - Nakajima, Kiyomi

AU - Ahmet, Parhat

AU - Aoyama, Toyomi

AU - Chikyow, Toyohiro

AU - Chichibu, Shigefusa F.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Effects of low temperature (LT-) GaN insertion on the cubic (c-) GaN thin film growth by metalorganic vapor phase epitaxy were investigated. Approximately 8-10-nm-thick LT-GaN were found to be essential for the growth of the c-GaN overlayer to prevent the films from peeling off from GaAs substrates and from the hexagonal GaN inclusion. When the LT-GaN was thinner than 8 nm, good quality c-GaN was obtained although distinct voids were formed at the c-GaN/GaAs interface. From the cross-sectional transmission electron microscopy (TEM) observation, lateral growth over the voids was found.

AB - Effects of low temperature (LT-) GaN insertion on the cubic (c-) GaN thin film growth by metalorganic vapor phase epitaxy were investigated. Approximately 8-10-nm-thick LT-GaN were found to be essential for the growth of the c-GaN overlayer to prevent the films from peeling off from GaAs substrates and from the hexagonal GaN inclusion. When the LT-GaN was thinner than 8 nm, good quality c-GaN was obtained although distinct voids were formed at the c-GaN/GaAs interface. From the cross-sectional transmission electron microscopy (TEM) observation, lateral growth over the voids was found.

UR - http://www.scopus.com/inward/record.url?scp=84875122790&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875122790&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303410

DO - 10.1002/pssc.200303410

M3 - Conference article

AN - SCOPUS:84875122790

SP - 2099

EP - 2102

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -