Effects of deposition parameters of low-temperature GaN layer on the structural and optical properties of cubic GaN epilayers grown on GaAs(001) substrates by MOVPE

Mutsumi Sugiyama, Taiki Nosaka, Kiyomi Nakajima, Parhat Ahmet, Toyomi Aoyama, Toyohiro Chikyow, Shigefusa F. Chichibu

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

Effects of low temperature (LT-) GaN insertion on the cubic (c-) GaN thin film growth by metalorganic vapor phase epitaxy were investigated. Approximately 8-10-nm-thick LT-GaN were found to be essential for the growth of the c-GaN overlayer to prevent the films from peeling off from GaAs substrates and from the hexagonal GaN inclusion. When the LT-GaN was thinner than 8 nm, good quality c-GaN was obtained although distinct voids were formed at the c-GaN/GaAs interface. From the cross-sectional transmission electron microscopy (TEM) observation, lateral growth over the voids was found.

Original languageEnglish
Pages (from-to)2099-2102
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - 2003 Dec 1
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

ASJC Scopus subject areas

  • Condensed Matter Physics

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