TY - JOUR
T1 - Effects of deposition parameters of low-temperature GaN layer on the structural and optical properties of cubic GaN epilayers grown on GaAs(001) substrates by MOVPE
AU - Sugiyama, Mutsumi
AU - Nosaka, Taiki
AU - Nakajima, Kiyomi
AU - Ahmet, Parhat
AU - Aoyama, Toyomi
AU - Chikyow, Toyohiro
AU - Chichibu, Shigefusa F.
PY - 2003
Y1 - 2003
N2 - Effects of low temperature (LT-) GaN insertion on the cubic (c-) GaN thin film growth by metalorganic vapor phase epitaxy were investigated. Approximately 8-10-nm-thick LT-GaN were found to be essential for the growth of the c-GaN overlayer to prevent the films from peeling off from GaAs substrates and from the hexagonal GaN inclusion. When the LT-GaN was thinner than 8 nm, good quality c-GaN was obtained although distinct voids were formed at the c-GaN/GaAs interface. From the cross-sectional transmission electron microscopy (TEM) observation, lateral growth over the voids was found.
AB - Effects of low temperature (LT-) GaN insertion on the cubic (c-) GaN thin film growth by metalorganic vapor phase epitaxy were investigated. Approximately 8-10-nm-thick LT-GaN were found to be essential for the growth of the c-GaN overlayer to prevent the films from peeling off from GaAs substrates and from the hexagonal GaN inclusion. When the LT-GaN was thinner than 8 nm, good quality c-GaN was obtained although distinct voids were formed at the c-GaN/GaAs interface. From the cross-sectional transmission electron microscopy (TEM) observation, lateral growth over the voids was found.
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U2 - 10.1002/pssc.200303410
DO - 10.1002/pssc.200303410
M3 - Conference article
AN - SCOPUS:84875122790
SP - 2099
EP - 2102
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1610-1634
IS - 7
T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003
Y2 - 25 May 2003 through 30 May 2003
ER -