Effects of degree of dissociation on aluminum etching in high-density Cl2 plasmas

Seiji Samukawa, Vincent M. Donnelly

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

At the same input power (1000 W), inductive coupled plasma (ICP) and ultrahigh-frequency (UHF) plasma sources produced electron densities of 1 × 1011 cm-3 at 3.5 mTorr, yet the UHF plasma was much less dissociated (30%) than the ICP plasma (70%). This can be attributed to differences in the electron energy distribution functions in the UHF and ICP plasmas, especially at low pressure. Under these conditions, Al etching profiles were investigated to understand the influences of the degree of dissociation on the etching reactions. UHF plasmas could completely accomplish anisotropic etching with just Cl2 as the feed gas, whereas the ICP produced isotropic etching profiles under the same conditions. This implies that the degree of dissociation strongly influences etching of the Al sidewall, as well as the anisotropic etching rate in a high density Cl2 plasma.

Original languageEnglish
Pages (from-to)L1036-L1039
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number9 PART A/B
DOIs
Publication statusPublished - 1998 Sep 15
Externally publishedYes

Keywords

  • Electron energy distribution function, dissociation
  • Inductive coupled plasma
  • Plasma etching
  • Ultrahigh-frequency plasma

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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