Effects of C/Si ratio on the structure of β-SiC film by halide CVD

Mingxu Han, Wei Zhou, Dingheng Zheng, Rong Tu, Song Zhang, Takashi Goto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Thick (over 1 mm) β-SiC films were deposited at a deposition temperature of 1823 K and a total pressure of 4 kPa by halide CVD using SiCl4 and CH4 as precursors, and H2 as carrier gas. The maximum deposition rate was 1125 μm h-1. The SiC films showed strong (220) preferred orientation. The grain size increased from 20 to 100 μm with increasing C/Si ratio.

Original languageEnglish
Title of host publicationAdvanced Ceramics and Novel Processing
PublisherTrans Tech Publications Ltd
Pages227-231
Number of pages5
ISBN (Print)9783038351306
DOIs
Publication statusPublished - 2014 Jan 1
Event5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013 - Wuhan, China
Duration: 2013 Dec 92013 Dec 12

Publication series

NameKey Engineering Materials
Volume616
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Other

Other5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013
CountryChina
CityWuhan
Period13/12/913/12/12

Keywords

  • Halide CVD
  • Ratio of C/Si (RC/Si)
  • β-SiC

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Han, M., Zhou, W., Zheng, D., Tu, R., Zhang, S., & Goto, T. (2014). Effects of C/Si ratio on the structure of β-SiC film by halide CVD. In Advanced Ceramics and Novel Processing (pp. 227-231). (Key Engineering Materials; Vol. 616). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.616.227