Abstract
Thick (over 1 mm) β-SiC films were deposited at a deposition temperature of 1823 K and a total pressure of 4 kPa by halide CVD using SiCl4 and CH4 as precursors, and H2 as carrier gas. The maximum deposition rate was 1125 μm h-1. The SiC films showed strong (220) preferred orientation. The grain size increased from 20 to 100 μm with increasing C/Si ratio.
| Original language | English |
|---|---|
| Title of host publication | Advanced Ceramics and Novel Processing |
| Publisher | Trans Tech Publications Ltd |
| Pages | 227-231 |
| Number of pages | 5 |
| ISBN (Print) | 9783038351306 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
| Event | 5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013 - Wuhan, China Duration: 2013 Dec 9 → 2013 Dec 12 |
Publication series
| Name | Key Engineering Materials |
|---|---|
| Volume | 616 |
| ISSN (Print) | 1013-9826 |
| ISSN (Electronic) | 1662-9795 |
Other
| Other | 5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013 |
|---|---|
| Country | China |
| City | Wuhan |
| Period | 13/12/9 → 13/12/12 |
Keywords
- Halide CVD
- Ratio of C/Si (RC/Si)
- β-SiC
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
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Cite this
Han, M., Zhou, W., Zheng, D., Tu, R., Zhang, S., & Goto, T. (2014). Effects of C/Si ratio on the structure of β-SiC film by halide CVD. In Advanced Ceramics and Novel Processing (pp. 227-231). (Key Engineering Materials; Vol. 616). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.616.227