TY - GEN
T1 - Effects of C/Si ratio on the structure of β-SiC film by halide CVD
AU - Han, Mingxu
AU - Zhou, Wei
AU - Zheng, Dingheng
AU - Tu, Rong
AU - Zhang, Song
AU - Goto, Takashi
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2014
Y1 - 2014
N2 - Thick (over 1 mm) β-SiC films were deposited at a deposition temperature of 1823 K and a total pressure of 4 kPa by halide CVD using SiCl4 and CH4 as precursors, and H2 as carrier gas. The maximum deposition rate was 1125 μm h-1. The SiC films showed strong (220) preferred orientation. The grain size increased from 20 to 100 μm with increasing C/Si ratio.
AB - Thick (over 1 mm) β-SiC films were deposited at a deposition temperature of 1823 K and a total pressure of 4 kPa by halide CVD using SiCl4 and CH4 as precursors, and H2 as carrier gas. The maximum deposition rate was 1125 μm h-1. The SiC films showed strong (220) preferred orientation. The grain size increased from 20 to 100 μm with increasing C/Si ratio.
KW - Halide CVD
KW - Ratio of C/Si (RC/Si)
KW - β-SiC
UR - http://www.scopus.com/inward/record.url?scp=84903997138&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84903997138&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.616.227
DO - 10.4028/www.scientific.net/KEM.616.227
M3 - Conference contribution
AN - SCOPUS:84903997138
SN - 9783038351306
T3 - Key Engineering Materials
SP - 227
EP - 231
BT - Advanced Ceramics and Novel Processing
PB - Trans Tech Publications Ltd
T2 - 5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013
Y2 - 9 December 2013 through 12 December 2013
ER -