TY - JOUR
T1 - Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure
AU - Sato, Soshi
AU - Kakushima, Kuniyuki
AU - Ahmet, Parhat
AU - Ohmori, Kenji
AU - Natori, Kenji
AU - Yamada, Keisaku
AU - Iwai, Hiroshi
N1 - Funding Information:
The authors thank all members of ASKA II line and the researchers in the front-end program in the R&D department 1, Selete, Tsukuba for device fabrication and fruitful discussions. This work was supported by the program ‘Development of Nanoelectronic Device Technology’ of the New Energy and Industrial Technology Development Organization (NEDO). The authors thank Dr. Daniel Berrar for proofreading.
PY - 2011/11
Y1 - 2011/11
N2 - Structural effects, especially corner angle of upper-corners of trapezoidal and rectangular, and triangular cross-sectional shapes of silicon nanowire field-effect transistors on effective carrier mobility and normalized inversion charge density have been investigated. 〈1 0 0〉-directed silicon nanowire field-effect transistors with semi-gate around structure fabricated on (1 0 0)-oriented silicon-on-insulator wafers were evaluated. As the upper-corner angle decreased from obtuse to acute angle, we observed an increased amount of inversion charge using split-CV measurement. On the other hand, the effective carrier mobility dependence on the upper-corner angle seems to have an optimized point near 100° at 296 K. Although normalized inversion charge density was the largest with acute angles, effective carrier mobility with acute upper-corner angle was severely degraded. Considering the intrinsic delay time of SiNW FET, SiNW FETs with trapezoidal cross-section with upper-corner angle of 100° is more suitable in this work to achieve high electrical performance. We believe these findings could represent guidelines for the design of high-performance SiNW FETs.
AB - Structural effects, especially corner angle of upper-corners of trapezoidal and rectangular, and triangular cross-sectional shapes of silicon nanowire field-effect transistors on effective carrier mobility and normalized inversion charge density have been investigated. 〈1 0 0〉-directed silicon nanowire field-effect transistors with semi-gate around structure fabricated on (1 0 0)-oriented silicon-on-insulator wafers were evaluated. As the upper-corner angle decreased from obtuse to acute angle, we observed an increased amount of inversion charge using split-CV measurement. On the other hand, the effective carrier mobility dependence on the upper-corner angle seems to have an optimized point near 100° at 296 K. Although normalized inversion charge density was the largest with acute angles, effective carrier mobility with acute upper-corner angle was severely degraded. Considering the intrinsic delay time of SiNW FET, SiNW FETs with trapezoidal cross-section with upper-corner angle of 100° is more suitable in this work to achieve high electrical performance. We believe these findings could represent guidelines for the design of high-performance SiNW FETs.
KW - Corner angle
KW - Effective carrier mobility
KW - Inversion charge density
KW - Semi gate-around structure
KW - Silicon nanowire
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U2 - 10.1016/j.sse.2011.06.011
DO - 10.1016/j.sse.2011.06.011
M3 - Article
AN - SCOPUS:80054045163
VL - 65-66
SP - 2
EP - 8
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 1
ER -