Effects of composition deviation of CuAl2on BTS and TDDB reliability

Toshihiro Kuge, Masataka Yahagi, Junichi Koike

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we report the property and reliability of CuAl2 and its effects of compositional shift within ±5%. Resistivity was found to be 7-8 μΩ· cm after annealing at 400 °C, even with compositional shift. Capacitance-Voltage (C-V) after Bias Thermal Stress (BTS) test showed no shift of flat-band voltage under the condition of 3.0 MV/cm × 30 min at 250 °C. Time-Dependent-Dielectric-Breakdown (TDDB) evaluation showed that the reliability is better than that of conventional Cu/TaN interconnects.

Original languageEnglish
Title of host publication2021 IEEE International Interconnect Technology Conference, IITC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728176321
DOIs
Publication statusPublished - 2021 Jul 6
Event24th Annual IEEE International Interconnect Technology Conference, IITC 2021 - Virtual, Kyoto, Japan
Duration: 2021 Jul 62021 Jul 9

Publication series

Name2021 IEEE International Interconnect Technology Conference, IITC 2021

Conference

Conference24th Annual IEEE International Interconnect Technology Conference, IITC 2021
Country/TerritoryJapan
CityVirtual, Kyoto
Period21/7/621/7/9

Keywords

  • Barrie-free
  • Interconnect metal
  • Liner-free
  • Reliability

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

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