Effects of composition and structure on hydrogen incorporation in tungsten oxide films deposited by sputtering

Aichi Inouye, Shunya Yamamoto, Shinji Nagata, Masahito Yoshikawa, Tatsuo Shikama

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The effects of composition and structure on hydrogen incorporation in tungsten oxide films were investigated. Films were deposited on carbon and SiO2 substrates using a reactive sputtering by varying the substrate temperature from 30 to 600 °C in argon and oxygen mixture. The films were characterized using X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis (ERDA) and Raman scattering. XRD patterns showed amorphous structure in the films deposited below 400 °C and (0 1 0) oriented monoclinic WO3 in the films deposited beyond 400 °C. The results of RBS and ERDA indicated that hydrogen concentration in the amorphous films increased from 0.1 to 0.7 H/W with changing the composition from WO0.25 to WO3. The hydrogen concentration in WO3 films decreased to 0.4 H/W with increasing the substrate temperature during deposition. The Raman spectra of the WO3 films revealed that decreasing of W6+{double bond, long}O terminals was related to decreasing of the hydrogen concentration. It was considered that the incorporated hydrogen in tungsten oxide films was bonded at the end of W6+{double bond, long}O terminals.

Original languageEnglish
Pages (from-to)3381-3386
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume266
Issue number15
DOIs
Publication statusPublished - 2008 Aug
Externally publishedYes

Keywords

  • ERDA
  • Hydrogen
  • Sputtering
  • Tungsten oxide

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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