TY - JOUR
T1 - Effects of composition and structure on hydrogen incorporation in tungsten oxide films deposited by sputtering
AU - Inouye, Aichi
AU - Yamamoto, Shunya
AU - Nagata, Shinji
AU - Yoshikawa, Masahito
AU - Shikama, Tatsuo
N1 - Funding Information:
This work was supported by a Grant-in-Aid for Scientific Research(C) from the Japan Society for the Promotion of Science (No. 19560717).
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2008/8
Y1 - 2008/8
N2 - The effects of composition and structure on hydrogen incorporation in tungsten oxide films were investigated. Films were deposited on carbon and SiO2 substrates using a reactive sputtering by varying the substrate temperature from 30 to 600 °C in argon and oxygen mixture. The films were characterized using X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis (ERDA) and Raman scattering. XRD patterns showed amorphous structure in the films deposited below 400 °C and (0 1 0) oriented monoclinic WO3 in the films deposited beyond 400 °C. The results of RBS and ERDA indicated that hydrogen concentration in the amorphous films increased from 0.1 to 0.7 H/W with changing the composition from WO0.25 to WO3. The hydrogen concentration in WO3 films decreased to 0.4 H/W with increasing the substrate temperature during deposition. The Raman spectra of the WO3 films revealed that decreasing of W6+{double bond, long}O terminals was related to decreasing of the hydrogen concentration. It was considered that the incorporated hydrogen in tungsten oxide films was bonded at the end of W6+{double bond, long}O terminals.
AB - The effects of composition and structure on hydrogen incorporation in tungsten oxide films were investigated. Films were deposited on carbon and SiO2 substrates using a reactive sputtering by varying the substrate temperature from 30 to 600 °C in argon and oxygen mixture. The films were characterized using X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis (ERDA) and Raman scattering. XRD patterns showed amorphous structure in the films deposited below 400 °C and (0 1 0) oriented monoclinic WO3 in the films deposited beyond 400 °C. The results of RBS and ERDA indicated that hydrogen concentration in the amorphous films increased from 0.1 to 0.7 H/W with changing the composition from WO0.25 to WO3. The hydrogen concentration in WO3 films decreased to 0.4 H/W with increasing the substrate temperature during deposition. The Raman spectra of the WO3 films revealed that decreasing of W6+{double bond, long}O terminals was related to decreasing of the hydrogen concentration. It was considered that the incorporated hydrogen in tungsten oxide films was bonded at the end of W6+{double bond, long}O terminals.
KW - ERDA
KW - Hydrogen
KW - Sputtering
KW - Tungsten oxide
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U2 - 10.1016/j.nimb.2008.05.008
DO - 10.1016/j.nimb.2008.05.008
M3 - Article
AN - SCOPUS:48049092811
VL - 266
SP - 3381
EP - 3386
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 15
ER -