TY - JOUR
T1 - Effects of combined Ar/O2 plasma and microwave irradiation on electrical performance and stability in solution-deposited amorphous InGaZnO thin-film transistors
AU - Hwang, Yeong Hyeon
AU - Kim, Kwan Soo
AU - Cho, Won Ju
PY - 2014/4
Y1 - 2014/4
N2 - We demonstrated the improvement of electrical performance and stability of solution-deposited amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) by combined Ar/O2 plasma and microwave irradiation (MWI) treatment at low temperature. After the combined MWI and Ar/O2 plasma treatments, the bonding between metal and oxygen ions was strengthened, and then the solution-deposited a-IGZO film acted as a semiconductor for transistors. In addition, the Ar/O2 plasma treatment promoted the reliability of solution-deposited a-IGZO TFTs owing to the removal of residual carbon, which easily traps electrons. Consequently, the solution-deposited a-IGZO TFT treated with the combination of Ar/O2 plasma and MWI exhibited excellent electrical stability as well as an improved transfer characteristic. Therefore, the combined Ar/O2 plasma and MWI treatment is a feasible post-treatment to realize flexible electronics with solution-deposited metal oxide thin films.
AB - We demonstrated the improvement of electrical performance and stability of solution-deposited amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) by combined Ar/O2 plasma and microwave irradiation (MWI) treatment at low temperature. After the combined MWI and Ar/O2 plasma treatments, the bonding between metal and oxygen ions was strengthened, and then the solution-deposited a-IGZO film acted as a semiconductor for transistors. In addition, the Ar/O2 plasma treatment promoted the reliability of solution-deposited a-IGZO TFTs owing to the removal of residual carbon, which easily traps electrons. Consequently, the solution-deposited a-IGZO TFT treated with the combination of Ar/O2 plasma and MWI exhibited excellent electrical stability as well as an improved transfer characteristic. Therefore, the combined Ar/O2 plasma and MWI treatment is a feasible post-treatment to realize flexible electronics with solution-deposited metal oxide thin films.
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U2 - 10.7567/JJAP.53.04EF12
DO - 10.7567/JJAP.53.04EF12
M3 - Article
AN - SCOPUS:84903301946
VL - 53
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 SPEC. ISSUE
M1 - 04EF12
ER -