Effects of Carbon Doping on Trapped Magnetic Field of MgB2 Bulk Prepared by in-situ Hot Isostatic Pressing Method

Tomoyuki Naito, Arata Ogino, Hiroyuki Fujishiro, Satoshi Awaji

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1 Citation (Scopus)

Abstract

We report the effects of carbon doping on the trapped field properties of MgB2 bulks doped with graphite (C) and B4C, which were prepared by an in-situ hot isostatic pressing method. The trapped fields, BT's were degraded by the graphite and B4C doping above 15 K, which was predominantly due to the lowered Tc by the C substitution. However, the slope of BT(T) and the irreversibility line, Birr(T), determined from the resistive transitions indicated that the BT of the graphite-doped bulk was expected to exceed that of the pristine bulk below 15 K. Contrary to the literature by other groups, B4C did not enhance the vortex pinning properties.

Original languageEnglish
Article number9057401
JournalIEEE Transactions on Applied Superconductivity
Volume30
Issue number4
DOIs
Publication statusPublished - 2020 Jun 1

Keywords

  • MgB
  • carbon doping
  • trapped field

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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