Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions

M. Kodzuka, T. Ohkubo, K. Hono, S. Ikeda, H. D. Gan, H. Ohno

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27 Citations (Scopus)

Abstract

The effect of B concentration on the tunneling magnetoresistance (TMR) of (Co 25Fe 75) 100-xB x/MgO/ (Co 25Fe 75) 100-xB x (x = 22 and 33) pseudo-spin-valve (P-SV) magnetic tunnel junctions (MTJs) was investigated. The TMR ratios for optimally annealed MTJs with x 22 and 33 were 340% and 170%, respectively, at room temperature. High resolution transmission electron microscopy (HRTEM) observation showed a weaker (001) texture in the MgO barrier in the MTJ with x = 33. The bottom electrode was not fully crystallized even with a considerable amount of B in the (Co 25Fe 75) 67B 33, while good epitaxy was observed between (001) textured MgO and (Co 25Fe 75) 78B 22 electrodes.

Original languageEnglish
Article number043913
JournalJournal of Applied Physics
Volume111
Issue number4
DOIs
Publication statusPublished - 2012 Feb 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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