Effects of AsH3 Surface Treatment for the Improvement of Ultrashallow Area-Selective Regrown GaAs Sidewall Tunnel Junction

Yutaka Oyama, Takeo Ohno, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Effects of AsH3 surface treatment just prior to regrowth on ultrashallow (49 nm) p+n+ GaAs sidewall tunnel junction characteristics were investigated. Fabricated tunnel junctions have shown extremely high record peak current density of 37,000 A cm-2, and the surface treatment just prior to regrowth has shown great reduction of the valley current by a factor of 4 and the improvement in peak-to-valley current ratio has been achieved by a factor of 2.6. Mechanism of the AsH3 surface treatment effects are discussed in view of the control of surface stoichiometry and related interface phenomena.

Original languageEnglish
Pages (from-to)G131-G135
JournalJournal of the Electrochemical Society
Volume151
Issue number2
DOIs
Publication statusPublished - 2004 Mar 4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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