Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction

Takeo Ohno, Yutaka Oyama, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Low-temperature (290°C) area-selective regrowth by molecular layer epitaxy (MLE) was applied for the fabrication of an ultra-shallow sidewall (50nm) GaAs tunnel junction. Fabricated tunnel junctions have shown a record peak current density up to 35,000A/cm2. It is shown that the tunnel junction characteristics are strongly dependent on the sidewall orientation and the AsH3 surface treatment conditions just prior to regrowth. The effects of AsH3 surface treatment are discussed in view of the control of surface stoichiometry.

Original languageEnglish
Pages (from-to)417-420
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume6
Issue number5-6
DOIs
Publication statusPublished - 2003 Oct 1

Keywords

  • Area-selective epitaxy
  • GaAs
  • Regrowth
  • Semiconductor interfaces
  • Sidewall
  • Tunnel junction

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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