TY - JOUR
T1 - Effects of annealing temperature on sensing properties of magnetic-tunnel-junction-based sensors with perpendicular synthetic antiferromagnetic Co/Pt pinned layer
AU - Ogasawara, Takahiro
AU - Oogane, Mikihiko
AU - Tsunoda, Masakiyo
AU - Ando, Yasuo
PY - 2018/11
Y1 - 2018/11
N2 - We studied the effects of annealing temperature on the sensing properties of linear-output magnetic sensor devices fabricated using a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) with a perpendicular synthetic antiferromagnetic (p-SAF) Co/Pt pinned layer. Owing to the large exchange coupling of the p-SAF Co/Pt pinned layer, linear tunnel magnetoresistance (TMR) curves were observed within a wide range of over ±3 kOe. In terms of sensing properties, the MTJ after annealing at 300 °C showed the highest sensitivity of 0.033%/Oe owing to the large TMR ratio of 164%. Moreover, the achieved nonlinearity of 0.061% full scale (FS) is quite low, which is comparable to that of commercialized Hall sensors.
AB - We studied the effects of annealing temperature on the sensing properties of linear-output magnetic sensor devices fabricated using a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) with a perpendicular synthetic antiferromagnetic (p-SAF) Co/Pt pinned layer. Owing to the large exchange coupling of the p-SAF Co/Pt pinned layer, linear tunnel magnetoresistance (TMR) curves were observed within a wide range of over ±3 kOe. In terms of sensing properties, the MTJ after annealing at 300 °C showed the highest sensitivity of 0.033%/Oe owing to the large TMR ratio of 164%. Moreover, the achieved nonlinearity of 0.061% full scale (FS) is quite low, which is comparable to that of commercialized Hall sensors.
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U2 - 10.7567/JJAP.57.110308
DO - 10.7567/JJAP.57.110308
M3 - Article
AN - SCOPUS:85055826638
VL - 57
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11
M1 - 110308
ER -