Effects of annealing temperature in a metal alloy nano-dot memory

Jung Min Lee, Gae Hun Lee, Yun Heub Song, Jichoru Be, Tetsu Tanaka

Research output: Contribution to journalArticle

Abstract

The annealing temperature dependence of the capacitance-voltage (C-V) characteristic has been studied in a metal-oxide semiconductor structure containing FePt nano-dots. Several in-situ annealing temperatures from 400 to ~700 °C in a high vacuum ambience (under 1 × 10-5 Pa) were evaluated in view of the cell's characteristics and its reliability. Here, we demonstrate that the annealing temperature is significant for memory performance in an alloy metal nano-dot structure. A higher in-situ temperature provides better retention and a more reliable memory window. In the sample with an in-situ annealing condition of 700 °C for 30 min, a memory window of 9.2 V at the initial stage was obtained, and a memory window of 6.2 V after 10 years was estimated, which is reliable for a non-volatile memory. From these results, the annealing condition for an alloy metal nano-dot memory is one of the critical parameters for the memory characteristics, and should be optimized for better memory performance.

Original languageEnglish
Pages (from-to)2782-2785
Number of pages4
JournalJournal of the Korean Physical Society
Volume59
Issue number4
DOIs
Publication statusPublished - 2011 Oct 14

Keywords

  • Annealing temperature
  • Cell reliability
  • Nano-dots memory
  • Non-volatile memory
  • Retention

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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