Abstract
Silicon oxynitride (SiON) buffer were used to investigate the electrical properties of ferroelectric Bi4Ti3O12 (BiT) films on Si(100). Hysteresis loops with a memory window of 2 V were exhibited by the capacitance-voltage (C-V) characteristics of Au/BiT/SiON/Si(100). Current-voltage characteristics showed the effects of SiON buuffer. Leakage current density of the specimen without the SiON buffer was larger than that of specimen with the buffer, in the reverse bias region.
| Original language | English |
|---|---|
| Pages (from-to) | 403-405 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 79 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2001 Jul 16 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Rokuta, E., Hotta, Y., Kubota, T., Tabata, H., Kobayashi, H., & Kawai, T. (2001). Effects of an ultrathin silicon oxynitride buffer layer on electrical properties of ferroelectric Bi4Ti3O12 thin films on p-Si(100) surfaces. Applied Physics Letters, 79(3), 403-405. https://doi.org/10.1063/1.1385799