Effects of an ultrathin silicon oxynitride buffer layer on electrical properties of ferroelectric Bi4Ti3O12 thin films on p-Si(100) surfaces

E. Rokuta, Y. Hotta, Tomohiro Kubota, H. Tabata, H. Kobayashi, T. Kawai

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Silicon oxynitride (SiON) buffer were used to investigate the electrical properties of ferroelectric Bi4Ti3O12 (BiT) films on Si(100). Hysteresis loops with a memory window of 2 V were exhibited by the capacitance-voltage (C-V) characteristics of Au/BiT/SiON/Si(100). Current-voltage characteristics showed the effects of SiON buuffer. Leakage current density of the specimen without the SiON buffer was larger than that of specimen with the buffer, in the reverse bias region.

Original languageEnglish
Pages (from-to)403-405
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number3
DOIs
Publication statusPublished - 2001 Jul 16

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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