Effects of an ultrathin silicon oxynitride buffer layer on electrical properties of ferroelectric Bi4Ti3O12 thin films on p-Si(100) surfaces

E. Rokuta; Y. Hotta; T. Kubota; H. Tabata; H. Kobayashi; T. Kawai

doi:10.1063/1.1385799

Effects of an ultrathin silicon oxynitride buffer layer on electrical properties of ferroelectric Bi₄Ti₃O₁₂ thin films on p-Si(100) surfaces

E. Rokuta, Y. Hotta, T. Kubota, H. Tabata, H. Kobayashi, T. Kawai

Innovative Energy Research Center

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Silicon oxynitride (SiON) buffer were used to investigate the electrical properties of ferroelectric Bi₄Ti₃O₁₂ (BiT) films on Si(100). Hysteresis loops with a memory window of 2 V were exhibited by the capacitance-voltage (C-V) characteristics of Au/BiT/SiON/Si(100). Current-voltage characteristics showed the effects of SiON buuffer. Leakage current density of the specimen without the SiON buffer was larger than that of specimen with the buffer, in the reverse bias region.

Original language	English
Pages (from-to)	403-405
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	3
DOIs	https://doi.org/10.1063/1.1385799
Publication status	Published - 2001 Jul 16

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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AU - Kubota, T.

AU - Tabata, H.

AU - Kobayashi, H.

AU - Kawai, T.

PY - 2001/7/16

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N2 - Silicon oxynitride (SiON) buffer were used to investigate the electrical properties of ferroelectric Bi4Ti3O12 (BiT) films on Si(100). Hysteresis loops with a memory window of 2 V were exhibited by the capacitance-voltage (C-V) characteristics of Au/BiT/SiON/Si(100). Current-voltage characteristics showed the effects of SiON buuffer. Leakage current density of the specimen without the SiON buffer was larger than that of specimen with the buffer, in the reverse bias region.

AB - Silicon oxynitride (SiON) buffer were used to investigate the electrical properties of ferroelectric Bi4Ti3O12 (BiT) films on Si(100). Hysteresis loops with a memory window of 2 V were exhibited by the capacitance-voltage (C-V) characteristics of Au/BiT/SiON/Si(100). Current-voltage characteristics showed the effects of SiON buuffer. Leakage current density of the specimen without the SiON buffer was larger than that of specimen with the buffer, in the reverse bias region.

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Effects of an ultrathin silicon oxynitride buffer layer on electrical properties of ferroelectric Bi₄Ti₃O₁₂ thin films on p-Si(100) surfaces

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