Effects of Al2O3 atomic layer deposition on interfacial structure and electron transfer dynamics at Re-bipyridyl complex/TiO2 interfaces

Jia Song; Aimin Ge; Brandon Piercy; Mark D. Losego; Tianquan Lian

doi:10.1016/j.chemphys.2018.03.033

Effects of Al₂O₃ atomic layer deposition on interfacial structure and electron transfer dynamics at Re-bipyridyl complex/TiO₂ interfaces

Jia Song, Aimin Ge, Brandon Piercy, Mark D. Losego, Tianquan Lian

SCI - Chemistry

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Atomic layer deposition (ALD) of oxide layers on sensitizer- and/or catalyst-functionalized semiconductor surfaces have been used to improve the stability of dye-sensitized solar cells and photoelectrosynthesis cells. However, how the ALD layer affects the interfacial structure of adsorbed molecules and interfacial electron transfer dynamics is still unclear. Herein, we investigated the effects of ALD of Al₂O₃ on adsorption structure of Re bipyridyl complex on TiO₂ nanocrystalline films and rutile (0 0 1) single crystals by IR absorption and sum frequency generation spectroscopy. Further, the electron transfer dynamics between the Re complex and TiO₂ film was also examined by ultrafast infrared transient absorption spectroscopy. Our results show that the electron injection yield decreases with the increase of ALD layer thickness.

Original language	English
Pages (from-to)	68-74
Number of pages	7
Journal	Chemical Physics
Volume	512
DOIs	https://doi.org/10.1016/j.chemphys.2018.03.033
Publication status	Published - 2018 Aug 17

ASJC Scopus subject areas

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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@article{210c342e140d4813bdce00b93dd83095,

title = "Effects of Al2O3 atomic layer deposition on interfacial structure and electron transfer dynamics at Re-bipyridyl complex/TiO2 interfaces",

abstract = "Atomic layer deposition (ALD) of oxide layers on sensitizer- and/or catalyst-functionalized semiconductor surfaces have been used to improve the stability of dye-sensitized solar cells and photoelectrosynthesis cells. However, how the ALD layer affects the interfacial structure of adsorbed molecules and interfacial electron transfer dynamics is still unclear. Herein, we investigated the effects of ALD of Al2O3 on adsorption structure of Re bipyridyl complex on TiO2 nanocrystalline films and rutile (0 0 1) single crystals by IR absorption and sum frequency generation spectroscopy. Further, the electron transfer dynamics between the Re complex and TiO2 film was also examined by ultrafast infrared transient absorption spectroscopy. Our results show that the electron injection yield decreases with the increase of ALD layer thickness.",

author = "Jia Song and Aimin Ge and Brandon Piercy and Losego, {Mark D.} and Tianquan Lian",

note = "Funding Information: This material is based upon work supported by the U.S. Department of Energy , Office of Science , Office of Basic Energy Sciences , Solar Photochemistry Program under Award Number ( DE-FG02-07ER-15906 ). ",

year = "2018",

month = aug,

day = "17",

doi = "10.1016/j.chemphys.2018.03.033",

language = "English",

volume = "512",

pages = "68--74",

journal = "Chemical Physics",

issn = "0301-0104",

publisher = "Elsevier",

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TY - JOUR

T1 - Effects of Al2O3 atomic layer deposition on interfacial structure and electron transfer dynamics at Re-bipyridyl complex/TiO2 interfaces

AU - Song, Jia

AU - Ge, Aimin

AU - Piercy, Brandon

AU - Losego, Mark D.

AU - Lian, Tianquan

N1 - Funding Information: This material is based upon work supported by the U.S. Department of Energy , Office of Science , Office of Basic Energy Sciences , Solar Photochemistry Program under Award Number ( DE-FG02-07ER-15906 ).

PY - 2018/8/17

Y1 - 2018/8/17

N2 - Atomic layer deposition (ALD) of oxide layers on sensitizer- and/or catalyst-functionalized semiconductor surfaces have been used to improve the stability of dye-sensitized solar cells and photoelectrosynthesis cells. However, how the ALD layer affects the interfacial structure of adsorbed molecules and interfacial electron transfer dynamics is still unclear. Herein, we investigated the effects of ALD of Al2O3 on adsorption structure of Re bipyridyl complex on TiO2 nanocrystalline films and rutile (0 0 1) single crystals by IR absorption and sum frequency generation spectroscopy. Further, the electron transfer dynamics between the Re complex and TiO2 film was also examined by ultrafast infrared transient absorption spectroscopy. Our results show that the electron injection yield decreases with the increase of ALD layer thickness.

AB - Atomic layer deposition (ALD) of oxide layers on sensitizer- and/or catalyst-functionalized semiconductor surfaces have been used to improve the stability of dye-sensitized solar cells and photoelectrosynthesis cells. However, how the ALD layer affects the interfacial structure of adsorbed molecules and interfacial electron transfer dynamics is still unclear. Herein, we investigated the effects of ALD of Al2O3 on adsorption structure of Re bipyridyl complex on TiO2 nanocrystalline films and rutile (0 0 1) single crystals by IR absorption and sum frequency generation spectroscopy. Further, the electron transfer dynamics between the Re complex and TiO2 film was also examined by ultrafast infrared transient absorption spectroscopy. Our results show that the electron injection yield decreases with the increase of ALD layer thickness.

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