Effects of Al substitution for Ca3Ta(Ga1−xAlx)3Si2O14 piezoelectric single crystals

Yuui Yokota, Yuji Ohashi, Tetsuo Kudo, Vladimir V. Kochurikhin, Andrey Medvedev, Shunsuke Kurosawa, Kei Kamada, Akira Yoshikawa

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Ca3Ta(Ga1-xAlx)3Si2O14 [CTGAS] material is a piezoelectric material belonging to the Langasite-type group (space group: P321).and the CTGAS single crystals (x=0, 0.25, 0.50, 0.75) with a diameter of 1 in. were grown by a Czochralski [Cz] method using an Ir crucible under Ar+2%O2. The CTGAS single crystals without any cracks could be grown using a CTGAS seed crystal in the x range of 0≤x≤0.75. Cell parameters, a and c, decrease while the a/c ratio increased with the Al concentration. Piezoelectric constant d11 and electromechanical coupling factor k12 for the X-cut specimens of the CTGAS single crystals were increased by the Al substitution.

Original languageEnglish
Pages (from-to)321-325
Number of pages5
JournalJournal of Crystal Growth
Volume468
DOIs
Publication statusPublished - 2017 Jun 15

Keywords

  • A1. X-ray diffraction
  • A2. Growth from melt
  • B1. Oxides
  • B2. Piezoelectric materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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