Effects of Al substitution for Ca3Ta(Ga1−xAlx)3Si2O14 piezoelectric single crystals

Yuui Yokota; Yuji Ohashi; Tetsuo Kudo; Vladimir V. Kochurikhin; Andrey Medvedev; Shunsuke Kurosawa; Kei Kamada; Akira Yoshikawa

doi:10.1016/j.jcrysgro.2016.10.044

Effects of Al substitution for Ca₃Ta(Ga_1−xAl_x)₃Si₂O₁₄ piezoelectric single crystals

Yuui Yokota, Yuji Ohashi, Tetsuo Kudo, Vladimir V. Kochurikhin, Andrey Medvedev, Shunsuke Kurosawa, Kei Kamada, Akira Yoshikawa

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Ca₃Ta(Ga_1-xAl_x)₃Si₂O₁₄ [CTGAS] material is a piezoelectric material belonging to the Langasite-type group (space group: P321).and the CTGAS single crystals (x=0, 0.25, 0.50, 0.75) with a diameter of 1 in. were grown by a Czochralski [Cz] method using an Ir crucible under Ar+2%O₂. The CTGAS single crystals without any cracks could be grown using a CTGAS seed crystal in the x range of 0≤x≤0.75. Cell parameters, a and c, decrease while the a/c ratio increased with the Al concentration. Piezoelectric constant d₁₁ and electromechanical coupling factor k₁₂ for the X-cut specimens of the CTGAS single crystals were increased by the Al substitution.

Original language	English
Pages (from-to)	321-325
Number of pages	5
Journal	Journal of Crystal Growth
Volume	468
DOIs	https://doi.org/10.1016/j.jcrysgro.2016.10.044
Publication status	Published - 2017 Jun 15

Keywords

A1. X-ray diffraction
A2. Growth from melt
B1. Oxides
B2. Piezoelectric materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2016.10.044

Cite this

@article{0ca66c9713ab478abc682f573a1f509c,

title = "Effects of Al substitution for Ca3Ta(Ga1−xAlx)3Si2O14 piezoelectric single crystals",

abstract = "Ca3Ta(Ga1-xAlx)3Si2O14 [CTGAS] material is a piezoelectric material belonging to the Langasite-type group (space group: P321).and the CTGAS single crystals (x=0, 0.25, 0.50, 0.75) with a diameter of 1 in. were grown by a Czochralski [Cz] method using an Ir crucible under Ar+2%O2. The CTGAS single crystals without any cracks could be grown using a CTGAS seed crystal in the x range of 0≤x≤0.75. Cell parameters, a and c, decrease while the a/c ratio increased with the Al concentration. Piezoelectric constant d11 and electromechanical coupling factor k12 for the X-cut specimens of the CTGAS single crystals were increased by the Al substitution.",

keywords = "A1. X-ray diffraction, A2. Growth from melt, B1. Oxides, B2. Piezoelectric materials",

author = "Yuui Yokota and Yuji Ohashi and Tetsuo Kudo and Kochurikhin, {Vladimir V.} and Andrey Medvedev and Shunsuke Kurosawa and Kei Kamada and Akira Yoshikawa",

note = "Funding Information: This work was partially supported by the New Energy and Industrial Technology Development Organization (NEDO), Ministry of Education, Culture, Sports, Science and Technology of Japanese government, Grant-in-Aid for Young Scientists (A), 15H05551, Development of Systems and Technology for Advanced Measurement and Analysis, Japan Science and Technology Agency (JST) and Adaptable & Seamless Technology Transfer Program through Target-driven R&D [A-STEP](JST). Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2017",

month = jun,

day = "15",

doi = "10.1016/j.jcrysgro.2016.10.044",

language = "English",

volume = "468",

pages = "321--325",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Effects of Al substitution for Ca3Ta(Ga1−xAlx)3Si2O14 piezoelectric single crystals

AU - Yokota, Yuui

AU - Ohashi, Yuji

AU - Kudo, Tetsuo

AU - Kochurikhin, Vladimir V.

AU - Medvedev, Andrey

AU - Kurosawa, Shunsuke

AU - Kamada, Kei

AU - Yoshikawa, Akira

N1 - Funding Information: This work was partially supported by the New Energy and Industrial Technology Development Organization (NEDO), Ministry of Education, Culture, Sports, Science and Technology of Japanese government, Grant-in-Aid for Young Scientists (A), 15H05551, Development of Systems and Technology for Advanced Measurement and Analysis, Japan Science and Technology Agency (JST) and Adaptable & Seamless Technology Transfer Program through Target-driven R&D [A-STEP](JST). Publisher Copyright: © 2016 Elsevier B.V.

PY - 2017/6/15

Y1 - 2017/6/15

N2 - Ca3Ta(Ga1-xAlx)3Si2O14 [CTGAS] material is a piezoelectric material belonging to the Langasite-type group (space group: P321).and the CTGAS single crystals (x=0, 0.25, 0.50, 0.75) with a diameter of 1 in. were grown by a Czochralski [Cz] method using an Ir crucible under Ar+2%O2. The CTGAS single crystals without any cracks could be grown using a CTGAS seed crystal in the x range of 0≤x≤0.75. Cell parameters, a and c, decrease while the a/c ratio increased with the Al concentration. Piezoelectric constant d11 and electromechanical coupling factor k12 for the X-cut specimens of the CTGAS single crystals were increased by the Al substitution.

AB - Ca3Ta(Ga1-xAlx)3Si2O14 [CTGAS] material is a piezoelectric material belonging to the Langasite-type group (space group: P321).and the CTGAS single crystals (x=0, 0.25, 0.50, 0.75) with a diameter of 1 in. were grown by a Czochralski [Cz] method using an Ir crucible under Ar+2%O2. The CTGAS single crystals without any cracks could be grown using a CTGAS seed crystal in the x range of 0≤x≤0.75. Cell parameters, a and c, decrease while the a/c ratio increased with the Al concentration. Piezoelectric constant d11 and electromechanical coupling factor k12 for the X-cut specimens of the CTGAS single crystals were increased by the Al substitution.

KW - A1. X-ray diffraction

KW - A2. Growth from melt

KW - B1. Oxides

KW - B2. Piezoelectric materials

UR - http://www.scopus.com/inward/record.url?scp=85003030720&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85003030720&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2016.10.044

DO - 10.1016/j.jcrysgro.2016.10.044

M3 - Article

AN - SCOPUS:85003030720

VL - 468

SP - 321

EP - 325

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -